Results 261 to 270 of about 104,391 (313)
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PNPN tunnel FET with controllable drain side tunnel barrier width: Proposal and analysis
Superlattices and Microstructures, 2015Abstract A detailed study of a technique to realize a PNPN tunnel field effect transistor (TFET) with a controllable tunnel barrier width on the drain side is reported in this paper. By using the charge plasma concept on a doped N + /P − starting structure, we have demonstrated the possibility of realizing the PNPN TFET without the need for any ...
Dawit Burusie Abdi, M. Jagadesh Kumar
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Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions
Chinese Physics Letters, 2004We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its
Li Fei-Fei +4 more
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Quantum tunneling through a rectangular barrier in multi-Weyl semimetals
, 2020Multi-Weyl semimetals are new types of topological semimetals whose topological charge is equal to the value of the winding number $J$. Here, we investigate the single-particle ballistic scattering on a rectangular barrier in multi-Weyl semimetals ...
Ying-Hua Deng +4 more
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Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode
Solid-State Electronics, 2002Abstract The novel Al 0.66 In 0.34 As 0.85 Sb 0.15 /In 0.53 Ga 0.47 As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs).
Yan-Kuin Su +7 more
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Experimental observation of super-Klein tunneling in phononic crystals
Applied Physics Letters, 2023We numerically and experimentally report the acoustic analogue of the super-Klein tunneling in a heterojunction of phononic crystals formed with Willis scatterers that exhibit pseudospin-1 Dirac cones.
Yifan Zhu +10 more
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Journal of Applied Physics, 1990
The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width.
J. F. Chen +4 more
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The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width.
J. F. Chen +4 more
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Quantum Tunneling in Reactions Modulated by External Electric Fields: Reactivity and Selectivity.
Journal of Physical Chemistry Letters, 2023Quantum tunneling and external electric fields (EEFs) can promote some reactions. However, the synergetic effect of an EEF on a tunneling-involving reaction and its temperature-dependence is not very clear.
Zhifeng Ma, Zeyin Yan, Xin Li, L. Chung
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Japanese Journal of Applied Physics, 1986
The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×102 Acm-2 to 1.2×104 ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×102 Acm-2 to 1.2×104 ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING
Modern Physics Letters B, 2003Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated.
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Applied Physics Letters, 1986
The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical ...
Masahiro Tsuchiya, Hiroyuki Sakaki
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