Interface-Engineered, Low-Damage IGZO/HfO<sub>2</sub> Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process. [PDF]
Hwang I +7 more
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Ferroelectric NAND for efficient hardware bayesian neural networks. [PDF]
Song M +10 more
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A full-featured 2D flash chip enabled by system integration. [PDF]
Liu C +13 more
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Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc +1 more source
Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Hwang H, Youn S, Kim H.
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Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories. [PDF]
Refaldi DG +4 more
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Post-Moore two-dimensional integrated electronics for angstrom-nodes. [PDF]
Shen Z +5 more
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A reconfigurable hardware infrastructure for evaluating PUFs in non-volatile memories. [PDF]
Frank F, Katzenbeisser S.
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Reconfigurable Physical Unclonable Function-Based Cryptographic Scheme Based on Memory-Enabled GFET Modulators. [PDF]
Ren Y +11 more
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Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes. [PDF]
Mun SA +8 more
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