Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Kang HY +4 more
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MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing. [PDF]
Wang Z, Li H, Jiang S.
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A high-performance onboard computing architecture for autonomous satellite mission planning. [PDF]
Rao J +7 more
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MoS<sub>2</sub> Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems. [PDF]
Kim KH +7 more
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Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]
Song I, Kim J, Lee S, Myeong I.
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Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Zhou Z +9 more
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Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review. [PDF]
Im J, Pak S, Woo SY, Shin W, Lee ST.
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Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement. [PDF]
Kim G +6 more
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Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc +1 more source
Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]
Chen X, Wang Z, Meng J, Wang T.
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