Results 81 to 90 of about 12,217,467 (150)

PAHT: Process-Aware History Tracking for Fast Read Retry in High-Capacity 3D NAND SSDs

Eng
While NAND flash memory has continuously increased its storage capacity, capacity-centric techniques have also exacerbated reliability problems. Conventionally, SSDs address reliability issues by incorporating read-retry operations that search for the ...
Seonguk Jang, Haun Jeon, Ilpyo Hong, Ryan Kim, Nathan Kim, Beomjun Kim, Myungsuk Kim   +6 more
doaj   +1 more source

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

IEEE Access
We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the $\Delta \text{V}_{\mathrm {th}}$ of each structure by doping type is compared to
Hyewon Kyung, Yunejae Suh, Youngho Jung, Daewoong Kang   +3 more
doaj   +1 more source

Characterizing 3D Floating Gate NAND Flash

, 2018
As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory.
Yue Zhu, You Zhou, Fei Wu, Zhonghai Lu, Qin Xiong, Yibing Chu, Changsheng Xie, Ping Huang, Zhou, You,, Xiong, Qin,, Wu, Fei,, Huang, Ping,, Xie, Changsheng,, Chu, Yibing,, Lu, Zhonghai,, Zhu, Yue,   +15 more
core   +1 more source

Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios

Advanced Electronic Materials
As the number of word‐line layers of vertical flash memory increases, it is difficult to develop high aspect ratio contact further. NAND cell scaling can consistently reduce with advanced fabrication development, but the reliability deterioration becomes
Sehyeon Choi, Yunseo Lim, Sejin Kim, San Park, Boncheol Ku, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, Changhwan Choi   +10 more
doaj   +1 more source

Vertical 3D NAND Flash Memory Technology

, 2011
We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process.
Hideaki Aochi, Akihiro Nitayama
core   +1 more source

The efficient recovery of deleted data from NAND flash memory [PDF]

, 2016
NAND flash memory is used in flash drives, smart phones, and memory cards for digital cameras. While there are ways to recover data from deleted memory, there are no universal or efficient ways to recover data from NAND flash memory.
Diercks, Lisa
core   +1 more source

Reliability of NAND Flash Memories

, 2010
The continuous demand for NAND flash memories with higher performance and storage capabilities pushes the manufactures towards the limits of present technologies and to explore new solutions, both from the physical and the architectural point of view ...
ZAMBELLI, Cristian, OLIVO, Piero, CHIMENTON, Andrea   +2 more
core  

ACF-packaged ultrathin Si-based flexible NAND flash memory

, 2015
In this paper, we demonstrate an ACF-packaged ultrathin Si-based flexible NAND flash memory by adopting a simple method, without using a conventional transfer process.
Yoo, Hyeon Gyun, Kim, Do Hyun, Daniel J. Joe, Hyeon Gyun Yoo, Joe, Daniel J., Do Hyun Kim, Keon Jae Lee, Lee, Keon Jae   +7 more
core   +1 more source

Cost-based Optimization of Block Recycling Scheme in NAND Flash Memory Based Storage System

, 2007
??????????????? ?????? ????????? ???????????? ????????? ???????????? ?????? SSD(Solid State Disk) ????????? ????????? ??????????????? ??? ?????? ????????? ???????????? ??????. ????????? ????????? ???????????? ??????, ????????????, ?????? ????????? ???????
Ahn ,Seongjun, Lee, Jongmin, Noh, Sam H., Kim, Sunghoon, Lee, Donghee   +4 more
core  

NAND flash reliability with rank modulation

, 2015
The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for improving NAND flash reliability. RM
Bruck, Jehoshua, Jiang, Anxiao, Li, Yue, En Gad, Eyal   +3 more
core   +1 more source