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Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2018
In this paper, novel boosting scheme using asymmetric pass voltage ( $\text{V}_{\mathrm{ pass}}$ ) is proposed to obtain high channel boosting potential and to reduce program disturbance in 3-D NAND flash memory.
Dae Woong Kwon +6 more
doaj +1 more source

Reliability challenges in 3D NAND Flash memories

, 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become
Cristian Zambelli +5 more
core +1 more source

Novel, parallel and differential synaptic architecture based on NAND flash memory for high-density and highly-reliable binary neural networks

, 2022
A novel synaptic architecture based on a NAND flash memory structure is proposed as a high-density synapse capable of exclusive NOR (XNOR) operation for binary neural networks (BNNs).
Lee, Sung-Tae +9 more
core +1 more source

NAND flash memory technologies

, 2016
This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future ...
Aritome, Seiichi
core

A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations

, 2020
In this study, the operation method of the proposed ferroelectric memory structure as a method to overcome the limitations of the existing Charge Trap Flash (CTF) memory Vertical NAND (V-NAND) structure was presented and verified through device ...
Jae Kyeong Jeong +4 more
core +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo +3 more
doaj +1 more source

A physics-guided surrogate modeling framework for RDF-dominated variability and bit-error rate analysis of 3D NAND flash memory

Discover Applied Sciences
Three-dimensional (3D) NAND flash memory has become the dominant non-volatile storage technology due to its high density and scalability. However, aggressive vertical stacking introduces significant threshold-voltage (VT) variability that affects device ...
Dikendra Kumar Verma, Anurag Vidyarthi, Upendra Mohan Bhatt +2 more
doaj +1 more source

Characterizing 3D Floating Gate NAND Flash

, 2017
In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various ...
Yue Zhu +7 more
core +1 more source

A NOR Emulation Strategy over NAND Flash Memory

, 2007
快閃記憶體大致可分為兩類：NOR型快閃記憶體及NAND型快閃記憶體。一般而言，因為有就地執行（eXecute-In-Place，XIP）和快速讀取等特性，NOR型快閃記憶體應用上適用於儲存程式的可執行檔。而擁有較大容量與較快寫入速度的NAND型快閃記憶體則適用於資料儲存。此外，兩者在成本上有很大的差距，NOR型快閃記憶體相對於NAND型快閃記憶體高出許多。基於市場的趨勢，若能以較具經濟效益的NAND型快閃記憶體取代NOR型快閃，將可大幅地降低成本、提升毛利。在這篇論文中 ...
Lin, Chien-Hung, 林建宏
core

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

, 2014
Abnormal cell-to-cell interference occurring in NAND flash memory has been investigated. In the case of extremely downscaled NAND flash memory, cell-to-cell interference increases abnormally.
Choi, Woo Young +5 more
core +1 more source

3d nand flash memory
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nand flash memory

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