Results 51 to 60 of about 12,217,467 (150)

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

, 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
core   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

An Efficient Dynamic Hash Index Structure for NAND Flash Memory

, 2009
We propose an efficient dynamic hash index structure suitable for a NAND flash memory environment. Since write operations incur significant overhead in NAND flash memory, our design of index structure focuses on minimizing the number of write operations ...
Myoung Ho KIM, Yang, Chul-Woong, Lee, Ki Yong, Ki Yong LEE, Lee, Yoon Joon, Kim, Myoung Ho, Chul-Woong YANG, Yoon-Joon LEE   +7 more
core   +1 more source

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling

Advanced Intelligent Systems, EarlyView.
Commercial vertical NAND flash memory supports Bayesian neural networks by using paired cells to produce bell‐shaped weight distributions. Read voltage controls their spread without additional memory cells or changes to the array structure. Simulations based on device measurements demonstrate improved uncertainty estimation and accuracy gains of up to ...
Sung‐Ho Park, Mingyun Oh, Dongbeen Shin, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope

IEEE Journal of the Electron Devices Society, 2016
Effect of design parameters including device geometry, doping, and bias on key performance is investigated in a diode-type NAND flash memory cell string working under positive feedback (PF) mechanism. The string has a tube-type poly-Si channel, n+ and p+
Nag Yong Choi, Sung-Min Joe, Byung-Gook Park, Jong-Ho Lee   +3 more
doaj   +1 more source

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

Small, EarlyView.
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez, Claudia Fernández‐González, Sandra Ruiz‐Gómez, Nicolas Mille, Jean Christophe Toussaint, Rachid Belkhou, Michael Foerster, Eva Pereiro, Lucía Aballe, Núria Bagués, Christophe Thirion, Daria Gusakova, Aurelien Masseboeuf, Olivier Fruchart, Lucas Pérez   +14 more
wiley   +1 more source

Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar

Small, EarlyView.
A NAND‐compatible ferroelectric memcapacitor crossbar enables charge‐domain in‐memory computing through displacement‐current‐based readout with strongly suppressed static conduction. The platform combines reliable multilevel programmability, linear vector–matrix multiplication, and 3D‐scalable operation, while supporting hardware‐assisted image ...
Hwiho Hwang, Junsu Yu, Sangwook Youn, Dahoon Lee, Hyungjin Kim   +4 more
wiley   +1 more source