Results 1 to 10 of about 8,846,054 (209)
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]
Scientific ReportsThis study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
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Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device. [PDF]
Materials (Basel), 2022 Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for the laser melting process of a-Si used in V ...
Son YI, Shin J.
europepmc +4 more sources
IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
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What Will Come After V‐NAND—Vertical Resistive Switching Memory? [PDF]
Advanced Electronic Materials, 2019 AbstractThe NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower ...
Kyung Jean Yoon +2 more
semanticscholar +4 more sources
Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory [PDF]
Nano ConvergenceVertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability.
Sung-Ho Park +11 more
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Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure
IEEE Journal of the Electron Devices SocietyIn this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states.
Seongwoo Kim +3 more
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Concealable physical unclonable functions using vertical NAND flash memory [PDF]
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
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Machine Learning Based Optimization Technique for High-Capacity V-NAND Flash Memory [PDF]
International Symposium for Testing and Failure Analysis, 2021 Abstract In the NAND flash manufacturing process, thousands of internal electronic fuses (eFuse) are tuned in order to optimize performance and validity. In this paper, we propose a machine learning optimization technique that uses deep learning (DL) and genetic algorithms (GA) to automatically tune eFuse values.
Jisuk Kim +14 more
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Memories - Materials, Devices, Circuits and Systems, 2023 As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects.
Gui-Fu Yang +6 more
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
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