Results 111 to 120 of about 8,846,054 (209)

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

IEEE Journal of the Electron Devices Society
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm { T}
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Usage of MikroTik Routerboards for Education in Computer Networks Courses at FIT [PDF]

, 2010
Bakalářská práce se zabývá využitím routerboardů MikroTik při výuce síťových kurzů. Bylo v ní vytvořeno několik cvičení zaměřených na směrování, směrovací protokoly, běh a zabezpečení bezdrátových síťí.
Šebeň, Patrik
core  

Liquid‐in‐Liquid Prints: High‐Density Biochemically Encoded Information Preserved in Microdroplet Arrays

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
This work introduces a novel approach for encoding and storing information in the liquid state in microdroplet arrays. These liquid‐in‐liquid prints are generated by a droplet printing system capable of dynamically setting the composition of each droplet pixel.
Maximilian Breitfeld, Robert Strutt, Leonard Fröhlich, Claudius L. Dietsche, Sebastian Bargfrede, Petra S. Dittrich   +5 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials
The complementary field‐effect transistor (CFET) structure is a highly area‐efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
doaj   +1 more source

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IEEE Journal of the Electron Devices Society
This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang   +3 more
doaj   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Use of PGF for Creation of New Blocks in LaTeX -- TikZ Package [PDF]

, 2016
Bakalárska práca je zameraná na typografický systém LaTeX a s ním súvisiacimi balíkmi TikZ&PGF pri tvorbe vlastných blokov z oblasti elektrotechniky. Cieľom práce bolo vytvoriť manuál, ktorý bude nadstavbou práce Tomáša Pavlorka.
Kubicová, Laura
core  

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through ...
Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin   +4 more
doaj   +1 more source

MH3 SCHIZOPHRENIA AND QUALITY OF LIFE ASSESSMENTS

, 2004
J. Adams, C. Lereun, S. Crowley, V. Nand, A. Eggleston   +4 more
semanticscholar   +1 more source