Results 41 to 50 of about 8,846,054 (209)

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference

Micromachines, 2021
Minimizing the variation in threshold voltage (Vt) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently.
Su-in Yi, Jungsik Kim
doaj   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source

CNFET-based design ternary logic design and arithmetic circuit simulation using HSPICE [PDF]

, 2015
This project report focuses on the multiple-value logic (MVL) or commonly known as ternary logic gates by using carbon nanotube (CNT) FETs devices (CNTFETs).
Ee, Poey Guan
core  

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

A 0.821-ratio purely combinatorial algorithm for maximum k-vertex cover in bipartite graphs [PDF]

, 2016
We study the polynomial time approximation of the max k-vertex cover problem in bipartite graphs and propose a purely combinatorial algorithm that beats the only such known algorithm, namely the greedy approach. We present a computer-assisted analysis of
A Badanidiyuru, AA Ageev, B Caskurlu, DS Hochbaum, E Petrank, M Frank, N Apollonio, U Feige   +7 more
core   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

Advanced Materials, EarlyView.
This study demonstrates a monolithic perovskite OELG device that performs all eight logic operations, including XOR and XNOR, without external bias. Enabled by trap‐engineered MAPbI3:PLL and dual photogates, it achieves reconfigurable logic and parallel decoding of amplitude–frequency signals, supporting scenario‐configured logic‐level separation for ...
Dante Ahn, Youngsoo Jang, Minz Lee, WooKyung Jeon, Yohan Yoon, Heon Lee, Assa Aravindh Sasikala, Namsoo Lim, Chandran Balamurugan, Hyeonghun Kim, Gun‐Young Jung, Sooncheol Kwon, Minah Seo, Yusin Pak   +13 more
wiley   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Nanomaterials, 2022
Exploiting multifunctional thin film transistors (TFTs) by low-temperature manufacturing strategy is a crucial step toward flexible electronics. Herein, a multifunctional indium–tungsten-oxide (IWO)-based TFT, gated by solid-state chitosan electrolyte ...
Shanshan Jiang, Gang He, Wenhao Wang, Minmin Zhu, Zhengquan Chen, Qian Gao, Yanmei Liu   +6 more
doaj   +1 more source