Results 61 to 70 of about 5,716,928 (282)

Electrospun Wood‐Derived Biopolymers as Electrodes in Electrochemical Energy Storage Technologies

Advanced Functional Materials, EarlyView.
Electrospinning transforms wood‐derived cellulose and lignin into architecturally defined, binder‐free carbon electrodes with tuneable porosity and functionality. This review shows how fibre design enables decoupled charge and mass transport, enhancing performance across battery systems, while identifying key challenges in spinnability, scalability ...
Michael W. Thielke, Hattie R. Chisnall, Jesus Vazquez Chavez, Ana B. Jorge Sobrido   +3 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Impact of KOH Etching on Nanostructure Fabricated by Local Anodic Oxidation Method

International Journal of Electrochemical Science, 2013
In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator.
Arash Dehzangi, Farhad Larki, Burhanuddin Y. Majlis, Mahmood Goodarz Naseri, Manizheh Navasery, A. Makarimi Abdullah, Sabar D. Hutagalung, Norihan Abdul Hamid, Mimiwaty Mohd Noor, Mohammadmahdi Vakilian, Elias B. Saion   +10 more
doaj   +1 more source

Tuning the Optoelectronic Properties of Wide Bandgap Perovskites: Data‐Driven Insights from Combinatorial Synthesis and High‐Throughput Experimentation

Advanced Functional Materials, EarlyView.
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek, Sergey Tsarev, Nathan Rodkey, Oleksandr Pshyk, Stefanie Frick, Maksym V. Kovalenko, Sebastian Siol   +6 more
wiley   +1 more source

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Scientific Reports, 2023
Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its chemical resistance, optical, electrical, and mechanical performance.
T. G. Konstantinova, M. M. Andronic, D. A. Baklykov, V. E. Stukalova, D. A. Ezenkova, E. V. Zikiy, M. V. Bashinova, A. A. Solovev, E. S. Lotkov, I. A. Ryzhikov, I. A. Rodionov   +10 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Neural network-driven molecular insights into alkaline wet etching of GaN: toward atomistic precision in nanostructure fabrication

npj Computational Materials
We present large-scale molecular dynamics (MD) simulations based on a neural network potential (NNP) to investigate alkaline wet etching of GaN, a process critical to nitride-based semiconductor fabrication.
Purun-hanul Kim, Jeong Min Choi, Seungwu Han, Youngho Kang   +3 more
doaj   +1 more source

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

Nanomaterials
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk   +5 more
doaj   +1 more source

Wet Chemical Etching of GaAs Nanowires for Quantum Confinement

International audienceThe quantum confinement in III−V semiconductors displays important applications such as lasers or single-photon sources. III−V nanowires (NWs) are ideal candidates for the integration of direct bandgap material on silicon.
Botella, Claude, Lamirand, Anne, Blanchard, Nicholas, Penuelas, José, Pelenc, Joséphine, Chauvin, Nicolas, Regreny, Philippe, Bugnet, Matthieu   +7 more
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source