Results 41 to 50 of about 4,818,117 (298)
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Digital Etching of Molybdenum Interconnects Using Plasma Oxidation
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing ...
Ivan Erofeev +13 more
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching [PDF]
A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium
Xia JS +5 more
core
Tapered Optical Fiber Couplers Fabricated by Droplet-Based Chemical Etching
This paper presents a fabrication method for 2 × 2 twisted fiber-optic directional couplers based on biconical low-loss tapered optical fibers using a two-step wet-etching technique with hydrofluoric acid-based droplets and surface tension-driven ...
Gyeongho Son, Youngho Jung, Kyoungsik Yu
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Taylor, M.R.S. +6 more
core +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
This study sought to fabricate a three-dimensional structure on a silicon surface using a combination of tribo-nanolithography (TNL) and wet chemical etching.
Noritaka KAWASEGI +5 more
doaj +1 more source

