Results 31 to 40 of about 4,818,117 (298)

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

International Journal of Photoenergy, 2014
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng   +4 more
doaj   +1 more source

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Micromachines, 2021
We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating.
Yue Zhao, Kaiping Zhang, Hailiang Li, Changqing Xie   +3 more
doaj   +1 more source

Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Nanomaterials, 2023
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and
Chohdi Amri, Shengzhong (Frank) Liu, Adel Najar   +2 more
doaj   +1 more source

Laser smoothing of binary gratings and multilevel etched structures in fused silica [PDF]

, 2010
We describe a promising approach to the processing of micro-optical components, where CO2 laser irradiation in raster scan is used to generate localized surface melting of binary or multilevel structures on silica, fabricated by conventional reactive-ion
Wlodarczyk, Krystian Lukasz, Mendez, Enrique, Hall, Denis R., Baker, Howard J., McBride, Roy   +4 more
core   +1 more source

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto   +12 more
doaj   +1 more source

Dry etching and sputtering [PDF]

, 2003
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and ...
Wilkinson, C.D.W., Rahman, M., M. Rahman, C. D. W. Wilkinson   +3 more
core   +1 more source

Textured stainless steel foil as efficient rear reflector for flexible black silicon

Results in Physics, 2021
This paper reports textured SS foil as an efficient rear reflector for flexible b-Si. Wafer thinning by concentrated potassium hydroxide (KOH) solution followed by metal-assisted chemical etching (MACE) are used to fabricate the flexible b-Si with 67 μm ...
Halo Dalshad Omar, Auwal Abdulkadir, Md. Roslan Hashim, Mohd Zamir Pakhuruddin   +3 more
doaj   +1 more source

Recycling of NiTi Shape Memory Alloys: Fundamental and Technological Aspects of a Vacuum Induction Melting Processing Route

Advanced Engineering Materials, EarlyView.
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee, Son Tung Mai, Sarath Menon, Braulio Gadiel Sánchez Ortega, Ralf Drautz, Alexander Kauffmann, Gunther Eggeler, Jan Frenzel   +7 more
wiley   +1 more source

Wet Chemical Etching of GaAs Nanowires for Quantum Confinement [PDF]

International audienceThe quantum confinement in III−V semiconductors displays important applications such as lasers or single-photon sources. III−V nanowires (NWs) are ideal candidates for the integration of direct bandgap material on silicon.
Botella, Claude, Lamirand, Anne, Blanchard, Nicholas, Penuelas, José, Pelenc, Joséphine, Chauvin, Nicolas, Regreny, Philippe, Bugnet, Matthieu   +7 more
core   +1 more source

Wet Chemical Etching of AlN Single Crystals [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 2002
Anisotropic chemical etching is an important means for characterizing the polarity and defect density of single crystals. In this letter, we present the results of our studies on the etching of bulk AlN crystals in aqueous potassium hydroxide solution. The nitrogen polarity (0001) basal plane initially etched rapidly, while the aluminum polarity basal ...
D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker   +4 more
openaire   +1 more source