Results 31 to 40 of about 5,716,928 (282)

XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

Results in Physics, 2018
Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers.
S.Yu. Turishchev, O.A. Chuvenkova, E.V. Parinova, D.A. Koyuda, R.G. Chumakov, M. Presselt, A. Schleusener, V. Sivakov   +7 more
doaj   +1 more source

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

International Journal of Photoenergy, 2014
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng   +4 more
doaj   +1 more source

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Micromachines, 2021
We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating.
Yue Zhao, Kaiping Zhang, Hailiang Li, Changqing Xie   +3 more
doaj   +1 more source

Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Nanomaterials, 2023
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and
Chohdi Amri, Shengzhong (Frank) Liu, Adel Najar   +2 more
doaj   +1 more source

The study of wet etching on GaN surface by potassium hydroxide solution

, 2017
Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process.
Lai, Yung-Yu; Hsu, Shih-Chieh; Chang, Hua-Sheng; Wu, YewChung Sermon; Chen, Ching-Hsiang; Chen, Liang-Yih; Cheng, Yuh-Jen
core   +1 more source

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto   +12 more
doaj   +1 more source

Fabrication Routes for Ionic Conducting Fiber Strain Sensors

Advanced Engineering Materials, EarlyView.
Ionic conducting fiber strain sensors (ICFSs) offer compliant, textile‐integrable sensing. Thus far, the commercialization of ICFSs has been constrained by fiber fabrication routes. This review provides a fabrication‐centric analysis of ICFSs correlating processing strategies with material properties and scalability.
Leo John Kershaw, Zhanhong Yang, Anne Ladegaard Skov, Magdalena Skowyra   +3 more
wiley   +1 more source

Textured stainless steel foil as efficient rear reflector for flexible black silicon

Results in Physics, 2021
This paper reports textured SS foil as an efficient rear reflector for flexible b-Si. Wafer thinning by concentrated potassium hydroxide (KOH) solution followed by metal-assisted chemical etching (MACE) are used to fabricate the flexible b-Si with 67 μm ...
Halo Dalshad Omar, Auwal Abdulkadir, Md. Roslan Hashim, Mohd Zamir Pakhuruddin   +3 more
doaj   +1 more source

Rapidly Solidified High‐Strength Invar 36 Prepared by Planar‐Flow Melt Spinning

Advanced Engineering Materials, EarlyView.
The Invar 36 alloy was rapidly solidified using the planar‐flow melt‐spinning technique. Ribbon samples with thicknesses ranging from 20 to 160 mm were produced. As the grain size of the ribbon decreased to sub‐micron levels, the hardness increased by more than 2 times.
Bekir Akgül, Mehmet Kul
wiley   +1 more source

Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

Advanced Materials Interfaces
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing ...
Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov   +13 more
doaj   +1 more source