Results 11 to 20 of about 4,818,117 (298)
Wet chemical etching mechanism of silicon [PDF]
Proceedings IEEE Micro Electro Mechanical Systems An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems, 2002 We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude.
Elwenspoek, Michael Curt +3 more
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Simulation of convection-driven wet-chemical etching [PDF]
, 2022 In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect.
Driesen, Cornelus Hendricus +1 more
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Transmittance modulation by gold nanoparticle mediated wet chemical etching of silica [PDF]
, 2023 Wet etching in hydrofluoric acid (HF) is one of the most common routes for the surface texturing of silica, leading to improved optical properties, which find applications in several fields.
Neethu, Thomas, Parasuraman, Swaminathan
core +1 more source
Wet chemical etching survey of III-nitrides [PDF]
Solid-State Electronics, 1997 AbstractWet chemical etching of GaN, InN, AIN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AIN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity.
Department of Materials Science and Engineering, University of Florida Gainesville FL 32611, U.S.A. ( host institution ) +7 more
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Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
Nanomaterials, 2022 In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel
Buqing Xu +9 more
doaj +1 more source
Femtosecond-Laser-Induced All-Silicon Dielectric Metasurfaces Assisted by Wet Chemical Etching
Ultrafast Science, 2023 All-dielectric metasurfaces offer low material loss and strong field localization and are, therefore, well suited for ultrathin and compact optical devices for electomagnetic wave manipulation at the nanoscale.
Ioanna Sakellari +3 more
doaj +1 more source
Surface improvement of laser powder bed fusion processed Ti6Al4V for fatigue applications
Additive Manufacturing Letters, 2022 Laser Powder Bed Fusion holds significant potential for the manufacturing of highly complex Ti6Al4V structural components, however the as-produced surface roughness severely limits the fatigue life of components.
Marten Jurg +3 more
doaj +1 more source
Preparation of small silicon carbide quantum dots by wet chemical etching [PDF]
, 2013 Fabrication of nanosized silicon carbide (SiC) crystals is a crucial step in many biomedical applications. Here we report an effective fabrication method of SiC nanocrystals based on simple electroless wet chemical etching of crystalline cubic SiC ...
Szekrényes, Zsolt +5 more
core +1 more source
Membranes, 2022 This work is devoted to the study of controlled preparation and filling of pores in polyethylene terephthalate (PET) membranes. A standard wet chemical etching with different protocols (isothermal and isochronous etching for different times and ...
Giovanni Ceccio +7 more
doaj +1 more source
Wet-chemical etching of InGaAs for Advanced CMOS Processing [PDF]
ECS Meeting Abstracts, 2013 Abstract not Available.
Dennis H. van Dorp +5 more
openaire +1 more source