Results 11 to 20 of about 5,716,928 (282)

Simulation of convection-driven wet-chemical etching [PDF]

, 2022
In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect.
Driesen, Cornelus Hendricus, Driesen, C.H.   +1 more
openaire   +4 more sources

Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]

, 1996
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Taylor, M.R.S., Holland, M.C., Beaumont, S.P., Asenov, A., Cameron, N.I., Murad, S., McLelland, H.   +6 more
core   +9 more sources

In Situ Process Control during Wet-Chemical Etching of Heteroepitaxial III-V Layers Using Reflection Anisotropy Spectroscopy. [PDF]

J Phys Chem A
The preparation of semiconductor surfaces for renewable energy or other optoelectronic applications requires highly precise control of surface structure and composition, rendering vacuum-based techniques typically the method of choice.
Schmitt EA, Guidat M, Flieg M, Grutke J, Diecke M, Möller K, Euchner H, May MM.   +7 more
europepmc   +2 more sources

Transmittance modulation by gold nanoparticle mediated wet chemical etching of silica [PDF]

, 2023
Wet etching in hydrofluoric acid (HF) is one of the most common routes for the surface texturing of silica, leading to improved optical properties, which find applications in several fields.
Neethu, Thomas, Parasuraman, Swaminathan
core   +1 more source

Monte Carlo simulation of wet chemical etching of silicon [PDF]

Sensors and materials, 2001
The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110).
van Veenendaal, Erik, van Suchtelen, Jaap, van Beurden, Paul, Cuppen, Herma M., van Enckevort, Willem J.P., Nijdam, A. Jasper, Elwenspoek, Miko, Vlieg, Elias   +7 more
core   +3 more sources

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Nanomaterials, 2022
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Yuanyuan Wu, Zhenzhen Kong, Jiale Su, Ben Li, Jiahan Yu, Henry H. Radamson   +9 more
doaj   +1 more source

Femtosecond-Laser-Induced All-Silicon Dielectric Metasurfaces Assisted by Wet Chemical Etching

Ultrafast Science, 2023
All-dielectric metasurfaces offer low material loss and strong field localization and are, therefore, well suited for ultrathin and compact optical devices for electomagnetic wave manipulation at the nanoscale.
Ioanna Sakellari, Sotiris Droulias, Andreas Lemonis, Emmanuel I. Stratakis   +3 more
doaj   +1 more source

Wet chemical etching mechanism of silicon [PDF]

Proceedings IEEE Micro Electro Mechanical Systems An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems, 2002
We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude.
Elwenspoek, Michael Curt, Lindberg, U., Kok, H., Smith, L.   +3 more
openaire   +2 more sources

Surface improvement of laser powder bed fusion processed Ti6Al4V for fatigue applications

Additive Manufacturing Letters, 2022
Laser Powder Bed Fusion holds significant potential for the manufacturing of highly complex Ti6Al4V structural components, however the as-produced surface roughness severely limits the fatigue life of components.
Marten Jurg, Alexander E. Medvedev, Wenyi Yan, Andrey Molotnikov   +3 more
doaj   +1 more source

Preparation of small silicon carbide quantum dots by wet chemical etching [PDF]

, 2013
Fabrication of nanosized silicon carbide (SiC) crystals is a crucial step in many biomedical applications. Here we report an effective fabrication method of SiC nanocrystals based on simple electroless wet chemical etching of crystalline cubic SiC ...
Szekrényes, Zsolt, Balogh, István, Kamarás, Katalin, Gali, Ádám, Czigány, Zsolt, Beke, Dávid   +5 more
core   +1 more source