Results 21 to 30 of about 5,716,928 (282)

Wet-chemical etching of InGaAs for Advanced CMOS Processing [PDF]

ECS Meeting Abstracts, 2013
Abstract not Available.
Dennis H. van Dorp, S. Arnauts, Daniel Cuypers, Jens Rip, Frank Holsteyns, Stefan De Gendt   +5 more
openaire   +1 more source

Etching and Doping of Pores in Polyethylene Terephthalate Analyzed by Ion Transmission Spectroscopy and Nuclear Depth Profiling

Membranes, 2022
This work is devoted to the study of controlled preparation and filling of pores in polyethylene terephthalate (PET) membranes. A standard wet chemical etching with different protocols (isothermal and isochronous etching for different times and ...
Giovanni Ceccio, Jiri Vacik, Jakub Siegel, Antonino Cannavó, Andrey Choukourov, Pavel Pleskunov, Marco Tosca, Dietmar Fink   +7 more
doaj   +1 more source

Numerical simulation of an ozone-based wet-chemical etching [PDF]

AIP Conference Proceedings, 2019
In the PV-industry, wet-chemical baths are used for surface structuring, conditioning and cleaning. Besides cleaning the wafers, ozone-based wet-chemical cleaning processes show the ancillary effect of intendedly etching back the emitter and/or rounding of textured surfaces.
Mohr, Lena, Krick, T., Zimmer, Martin, Fischer, Andreas, Moldovan, Anamaria   +4 more
openaire   +1 more source

Preparation of Nickel Nanoparticles Using Nickel Raffinate Separated by Solvent Extraction from The Spent FECL3 Etching Solution [PDF]

Archives of Metallurgy and Materials, 2019
FeCl3 bearing etching solution is mainly used for etching of metals used in shadow masks, PCBs and so on. Due course of Invar alloy etching process the FeCl3 bearing etching solution get contaminated with Ni2+ which affect adversely the etching ...
Il-Jeong Park, Basudev Swain, Dae-Weon Kim, Geon-Hong Kim, Deok-Hyun Han, Hang-Chul Jung   +5 more
doaj   +1 more source

Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Nanomaterials, 2021
As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages.
Jiaqi Zhang, Yichang Wu, Guofang Yang, Dazheng Chen, Jincheng Zhang, Hailong You, Chunfu Zhang, Yue Hao   +7 more
doaj   +1 more source

Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]

Hangkong bingqi
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj   +1 more source

Planarized Trench Isolation of In_0.52Al_0.48As/In_0.8Ga_0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

IEEE Journal of the Electron Devices Society, 2021
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang   +4 more
doaj   +1 more source

Infrared Light Absorption Enhancement in Crystalline Silicon Wafer Textured with H2SO4 Solution

UMYU Scientifica Journal, 2023
In recent years, the formation of microstructures on silicon wafer has gained popularity as a concept for increasing photon trapping and light absorption for optoelectronics applications.
Abdurrahman Muhammed, Nura Chiromawa Liman, Ibrahim Bagudo Muhammad, Abdurrahman khalil Ibrahim   +3 more
doaj   +1 more source

Wet Chemical Etching of AlN Single Crystals [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 2002
Anisotropic chemical etching is an important means for characterizing the polarity and defect density of single crystals. In this letter, we present the results of our studies on the etching of bulk AlN crystals in aqueous potassium hydroxide solution. The nitrogen polarity (0001) basal plane initially etched rapidly, while the aluminum polarity basal ...
D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker   +4 more
openaire   +1 more source

Wet chemical thinning of molybdenum disulfide down to its monolayer

APL Materials, 2014
We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS2) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO3) effectively etches thin MoS2 crystals from their edges via formation of MoO3 ...
Kiran Kumar Amara, Leiqiang Chu, Rajeev Kumar, Minglin Toh, Goki Eda   +4 more
doaj   +1 more source