Results 21 to 30 of about 4,818,117 (298)
The study of wet etching on GaN surface by potassium hydroxide solution [PDF]
, 2017 Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process.
Lai, Yung-Yu; Hsu, Shih-Chieh; Chang, Hua-Sheng; Wu, YewChung Sermon; Chen, Ching-Hsiang; Chen, Liang-Yih; Cheng, Yuh-Jen
core +1 more source
Wet Chemical Etching Of Ligao2 And Lialo2 [PDF]
, 2001 The effects of temperature and wet chemical etching solution on the etch rate LiGaO2 and LiAlO2 were investigated. The solutions studied were H2SO4, H3PO4, and HCl.
Johnson, J. W., Ip, K. P., Hsu, C. H.
core +3 more sources
Numerical simulation of an ozone-based wet-chemical etching [PDF]
AIP Conference Proceedings, 2019 In the PV-industry, wet-chemical baths are used for surface structuring, conditioning and cleaning. Besides cleaning the wafers, ozone-based wet-chemical cleaning processes show the ancillary effect of intendedly etching back the emitter and/or rounding of textured surfaces.
Mohr, Lena +4 more
openaire +1 more source
Preparation of Nickel Nanoparticles Using Nickel Raffinate Separated by Solvent Extraction from The Spent FECL3 Etching Solution [PDF]
Archives of Metallurgy and Materials, 2019 FeCl3 bearing etching solution is mainly used for etching of metals used in shadow masks, PCBs and so on. Due course of Invar alloy etching process the FeCl3 bearing etching solution get contaminated with Ni2+ which affect adversely the etching ...
Il-Jeong Park +5 more
doaj +1 more source
Nanomaterials, 2021 As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages.
Jiaqi Zhang +7 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen +4 more
doaj +1 more source
Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]
Hangkong bingqiThis paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj +1 more source
Infrared Light Absorption Enhancement in Crystalline Silicon Wafer Textured with H2SO4 Solution
UMYU Scientifica Journal, 2023 In recent years, the formation of microstructures on silicon wafer has gained popularity as a concept for increasing photon trapping and light absorption for optoelectronics applications.
Abdurrahman Muhammed +3 more
doaj +1 more source
Wet chemical thinning of molybdenum disulfide down to its monolayer
APL Materials, 2014 We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS2) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO3) effectively etches thin MoS2 crystals from their edges via formation of MoO3 ...
Kiran Kumar Amara +4 more
doaj +1 more source
XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
Results in Physics, 2018 Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers.
S.Yu. Turishchev +7 more
doaj +1 more source