Results 71 to 80 of about 4,818,117 (298)

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Scientific Reports, 2023
Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its chemical resistance, optical, electrical, and mechanical performance.
T. G. Konstantinova, M. M. Andronic, D. A. Baklykov, V. E. Stukalova, D. A. Ezenkova, E. V. Zikiy, M. V. Bashinova, A. A. Solovev, E. S. Lotkov, I. A. Ryzhikov, I. A. Rodionov   +10 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

SOI Waveguides Fabricated by Wet-Etching Method [PDF]

, 2003
SOI waveguides fabricated by wet-etching method are demonstrated. The single mode waveguide and 1×2 3dB BBI splitter are analyzed and designed by three dimensional beam propagation method to correct the error of effective index method and guided mode ...
Chen Shaowu, Liu Jingwei, Yan Qingfeng, Wang Xiaolong, Yu Jinzhong   +4 more
core  

Multiscale modeling of anisotropic wet chemical etching of crystalline silicon [PDF]

, 2002
We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale ...
R. M. Nieminen, M. A. Gosálvez, A. S. Foster   +2 more
core   +1 more source

Neural network-driven molecular insights into alkaline wet etching of GaN: toward atomistic precision in nanostructure fabrication

npj Computational Materials
We present large-scale molecular dynamics (MD) simulations based on a neural network potential (NNP) to investigate alkaline wet etching of GaN, a process critical to nitride-based semiconductor fabrication.
Purun-hanul Kim, Jeong Min Choi, Seungwu Han, Youngho Kang   +3 more
doaj   +1 more source

Etching-assisted femtosecond laser modification of hard materials

Opto-Electronic Advances, 2019
With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions.
Liu Xue-Qing, Bai Ben-Feng, Chen Qi-Dai, Sun Hong-Bo   +3 more
doaj   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition [PDF]

, 2017
Graphene growth and etching are reciprocal processes that can reach a dynamic balance during chemical vapor deposition (CVD). Most commonly, the growth of graphene is the dominate process, while the etching of graphene is a recessive process often ...
Birong Luo (1964989), Zhiping Xu (654842), Gui Yu (367037), Enlai Gao (2882204), Dechao Geng (1964992), Huaping Wang (3632671)   +5 more
core   +1 more source

Mitigating Concentration Polarization in Dry‐Processed Ultra‐Thick Cathodes Using a Low‐Viscosity Electrolyte With Soft Li+ Solvation

Advanced Functional Materials, EarlyView.
A low‐viscosity, soft‐solvating methyl ethanoate (ME)‐based electrolyte facilitates electrolyte infiltration into dense dry‐processed ultra‐thick NCM622 cathodes while reducing Li+ desolvation barriers at Li‐metal anodes. Balanced cathode‐scale ion transport and anode‐side interfacial kinetics mitigate concentration polarization and interfacial ...
Jae Bin Park, Yewon Park, Ah Reum Choi, Chaerin Park, Seonhee Jo, Seongwook Chae, Taekyun Kwon, Ji‐Oh Kim, Ji‐Hoon Baik, Sung Hyun Kwon, Minjoon Park, Jin Hong Lee   +11 more
wiley   +1 more source

Wet Chemical Etching Survey of III-Nitrides [PDF]

, 1999
Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 C. Only KOH-based solutions were found to etch AlN and InAlN.
MacKenzie, J. D., Zolper, J. C., Pearton, S.J., Vartuli, C. B., Abernathy, C. R., Hays, D. C., Ren, F., Cho, H., Shul, R. J.   +8 more
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