Results 1 to 10 of about 73,522 (251)

Channel Modeling and Quantization Design for 3D NAND Flash Memory

open access: yesEntropy, 2023
As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers.
Cheng Wang   +5 more
doaj   +3 more sources

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]

open access: yesMicromachines, 2021
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli   +4 more
doaj   +3 more sources

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime [PDF]

open access: yesMicromachines
With vertical stacking, 3D NAND’s flash memory can achieve continuous capacity growth. However, the endurance variation between the stacked layers becomes more and more significant due to process variation, which will lead to the underutilization of many
Jialin Wang   +4 more
doaj   +2 more sources

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]

open access: yesScientific Reports
This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj   +2 more sources

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability [PDF]

open access: yesJournal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal   +2 more
doaj   +5 more sources

MoS2 Channel‐Enhanced High‐Density Charge Trap Flash Memory and Machine Learning‐Assisted Sensing Methodologies for Memory‐Centric Computing Systems [PDF]

open access: yesAdvanced Science
Driven by the shift of artificial intelligence (AI) workloads to edge devices, there is a growing demand for nonvolatile memory solutions that offer high‐density, low‐power consumption, and reliability.
Ki Han Kim   +7 more
doaj   +2 more sources

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability [PDF]

open access: yesMicromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng   +6 more
doaj   +2 more sources

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

open access: yesNanomaterials, 2022
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu   +6 more
doaj   +1 more source

Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application

open access: yesAdvanced Intelligent Systems, 2023
Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho   +8 more
doaj   +1 more source

Architecture and Process Integration Overview of 3D NAND Flash Technologies

open access: yesApplied Sciences, 2021
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee   +3 more
doaj   +1 more source

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