Results 11 to 20 of about 73,522 (251)
Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
doaj +3 more sources
Coding scheme for 3D vertical flash memory [PDF]
2015 IEEE International Conference on Communications (ICC), 2015 Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir +4 more
core +2 more sources
Architectural and Integration Options for 3D NAND Flash Memories [PDF]
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +3 more
doaj +3 more sources
IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj +1 more source
3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
AIP Advances, 2022 As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu +7 more
doaj +1 more source
Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
doaj +1 more source
Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
IEEE Access, 2022 The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj +1 more source
Micromachines, 2021 In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better ...
Woo-Jin Jung, Jun-Young Park
doaj +1 more source
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
doaj +1 more source
Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
doaj +1 more source