Results 161 to 170 of about 1,500,059 (236)

3D Floating Gate NAND Flash Memories

2016
Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
openaire   +1 more source

Reliability of 3D NAND Flash Memories

2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro, ZAMBELLI, Cristian, OLIVO, Piero   +2 more
openaire   +1 more source

A Heterogeneous Platform for 3D NAND-Based In-Memory Hyperdimensional Computing Engine for Genome Sequencing Applications

IEEE Transactions on Circuits and Systems Part 1: Regular Papers
Hyperdimensional (HD) computing is a promising paradigm for large-scale genome sequencing. In prior work, we proposed a 3D NAND-based HD computing engine as an energy-efficient solution for sequencing several gigabytes or terabytes of genomic data.
Po-Kai Hsu, Vaidehi Garg, A. Lu, Shimeng Yu   +3 more
semanticscholar   +1 more source

Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A novel High-Aspect-Ratio (HAR) dielectric etch technology which is capable of etching beyond $10 \mu \mathrm{m}$ depth memory channel hole for future generations of 3D NAND flash memory has been successfully developed for the first time.
Y. Kihara, M. Tomura, Wataru Sakamoto, M. Honda, Masayuki Kojima   +4 more
semanticscholar   +1 more source

2D vs 3D NAND technology: Reliability benchmark

2017 IEEE International Integrated Reliability Workshop (IIRW), 2017
In this paper, the key reliability characteristics of the 3D NAND technology are discussed and compared to the 2D NAND corresponding features. It is shown that 3D NAND can achieve up to 50% improvement of the intrinsic cell threshold voltage (V T ) distribution width, due to increased cell size and between — cell distance.
Niccolo Righetti, Giuseppina Puzzilli
openaire   +1 more source

Gate Side Injection Operating Mode for 3D NAND Flash Memories

International Memory Workshop
In this paper, we investigate a new operating mode for 3D-NAND flash cell programming and erasing. Whereas conventional flash cells are operated by injecting charges from the channel, this new scheme relies on charge injection from the gate electrode by ...
L. Breuil, R. Izmailov, M. Popovici, J. Stiers, A. Arreghini, S. Ramesh, G. V. D. Bosch, J. V. Houdt, M. Rosmeulen   +8 more
semanticscholar   +1 more source

3D NAND Flash Architectures

2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
openaire   +1 more source

Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure

IEEE International Reliability Physics Symposium
Cross-temperature effect is a significant reliability concern for 3D NAND Flash memory. In this paper we explore the origin of cross-temperature reliability by measuring the cell threshold voltage (Vth) distribution at different temperatures.
Mondol Anik Kumar, Biswajit Ray
semanticscholar   +1 more source

An alternative to Tungsten in 3D-NAND technology

2021 IEEE International Interconnect Technology Conference (IITC), 2021
As the number of wordlines has reached 128 layers in the realm of 3D-NAND, several challenges have emerged to produce these structures. Among these is metallization of the connection made with Tungsten. This paper explores Nickel alloys as an alternative metal. Several key data are presented to validate this new concept.
Suhr Dominique, Mevellec Vincent, Thiam Mikailou, Idier Jonathan, Raynal Frederic, Berthon Hermine, Perrault Elisa, Hann Nicolas, Doussot Celine, Kim Yeeseul, Baus Mathilde, Lakhdari Amine, Guittet Gaelle, Caillard Louis   +13 more
openaire   +1 more source

A Confined Storage Nitride 3D-NAND Cell with WL Airgap for Cell-To-Cell Interference Reduction and Improved Program Performances

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
We demonstrated a confined storage nitride (SN) 3D-NAND cell with an innovative process flow including WL airgap formation. Airgaps strongly reduced WL parasitic capacitance which translates into better program time $(\mathrm{t}_{\text{prog ...
D. Resnati, Gianpietro Carnevale, Shyam Surthi, Chris M. Carlson, Matthew Thorum, Terry Kim, E. Camerlenghi, R. Hill   +7 more
semanticscholar   +1 more source