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Impact of Mechanical Stress on the Electrical Performance of 3D NAND
2019 IEEE International Reliability Physics Symposium (IRPS), 2019We have developed a methodology for analyzing the impact of mechanical stress on the electrical performance of 3D NAND devices. The methodology relies on in-situ electrical characterization of 3D NAND flash memory under application of an external load with a nanoindenter. The forces applied in the experiment are converted to stress using finite element
Anastasiia Kruv +6 more
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Overview of 3D NAND Technologies and Outlook Invited Paper
2018 Non-Volatile Memory Technology Symposium (NVMTS), 2018In this paper, 3D NAND floating gate (FG) and charge trap (CT) cell fundamentals, advantages and challenges are discussed. Future scaling options and associated challenges from fabrication process integration, equipment engineering is briefly presented.
Srinath Venkatesan, Marc Aoulaiche
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2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Opportunities and challenges of 3D NAND scaling
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 20133D NAND is attracting increasing attention as a NAND scaling solution. In 3D NAND, the physical cell size is decoupled from the effective cell size by stacking multiple tiers. This enables effective NAND cell size scaling without degrading cell performance and reliability. However, 3D process integration could introduce new sources of cell degradation.
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3D Charge Trap NAND Flash Memories
ECS Transactions, 2016This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
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3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
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Reliability of 3D NAND Flash Memories
2016In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro +2 more
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Characterizing 3D Floating Gate NAND Flash
Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, 2017In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various error patterns. We believe that through our work, novel 3D NAND flash-oriented designs can be developed
Qin Xiong +7 more
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
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Scaling directions for 2D and 3D NAND cells
2012 International Electron Devices Meeting, 2012This paper describes NAND cell scaling directions for 20nm and beyond. Many of the 2D NAND cell scaling challenges can be resolved by a planar floating gate (FG) cell. Scaling directions and key technology requirements for 3D NAND are also discussed.
Akira Goda, Krishna Parat
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