Results 141 to 150 of about 2,676 (201)

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. [PDF]

open access: yesNat Commun
Zou T   +10 more
europepmc   +1 more source

Quantitative analysis of lung microwave ablation zone volume and shape. [PDF]

open access: yesEur Radiol Exp
Salkin RS   +12 more
europepmc   +1 more source

Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review. [PDF]

open access: yesBiomimetics (Basel)
Im J, Pak S, Woo SY, Shin W, Lee ST.
europepmc   +1 more source

High-κ Perovskite-Like Ternary Niobium Oxide Dielectrics for 2D Electronics. [PDF]

open access: yesAdv Mater
Zhang B   +10 more
europepmc   +1 more source

Characterizing 3D Floating Gate NAND Flash

open access: yesACM Transactions on Storage, 2018
As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory. These characteristics, especially those different from planar NAND flash, can significantly affect design choices ...
Qin Xiong, Fei Wu, Zhonghai Lu
exaly   +3 more sources

3D RRAM design and benchmark with 3d NAND FLASH

open access: yes2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device, circuit to system level. Due to the voltage drop and sneak path problem, the sub-array size of the
Pai-Yu Chen   +3 more
openaire   +2 more sources

Reliability of 3D NAND Flash Memories

open access: yes, 2016
In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro   +2 more
openaire   +2 more sources

Characterizing 3D Floating Gate NAND Flash

open access: yesProceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, 2017
In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various error patterns. We believe that through our work, novel 3D NAND flash-oriented designs can be developed
Qin Xiong   +7 more
openaire   +2 more sources

Reliability challenges in 3D NAND Flash memories

open access: yes2019 IEEE 11th International Memory Workshop (IMW), 2019
The reliability of 3D NAND Flash memory technology is depending on many factors. Most of them are related to the process-induced variability of the layers. Endurance, data retention capabilities, and cross-temperature immunity are the metrics that become affected by this, turning in peculiar reliability challenges that are difficult to be tackled ...
Zambelli C., Micheloni R., Olivo P.
openaire   +3 more sources
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Modeling and Optimization of Advanced 3D NAND Memory

2020 Device Research Conference (DRC), 2020
Development of a new complex technology such as 3D NAND requires significant efforts in terms of materials screening, process tuning, and device design leading to fabrication and characterization of many test wafers with significant time-to-market cost. In this context, modeling can help accelerate 3D NAND technology development.
Mehdi Saremi   +7 more
openaire   +1 more source

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