Results 121 to 130 of about 2,082 (171)
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2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
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Opportunities and challenges of 3D NAND scaling
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 20133D NAND is attracting increasing attention as a NAND scaling solution. In 3D NAND, the physical cell size is decoupled from the effective cell size by stacking multiple tiers. This enables effective NAND cell size scaling without degrading cell performance and reliability. However, 3D process integration could introduce new sources of cell degradation.
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Overview of 3D NAND Technologies and Outlook Invited Paper
2018 Non-Volatile Memory Technology Symposium (NVMTS), 2018In this paper, 3D NAND floating gate (FG) and charge trap (CT) cell fundamentals, advantages and challenges are discussed. Future scaling options and associated challenges from fabrication process integration, equipment engineering is briefly presented.
Srinath Venkatesan, Marc Aoulaiche
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Impact of Mechanical Stress on the Electrical Performance of 3D NAND
2019 IEEE International Reliability Physics Symposium (IRPS), 2019We have developed a methodology for analyzing the impact of mechanical stress on the electrical performance of 3D NAND devices. The methodology relies on in-situ electrical characterization of 3D NAND flash memory under application of an external load with a nanoindenter. The forces applied in the experiment are converted to stress using finite element
Anastasiia Kruv +6 more
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Reliability of 3D NAND Flash Memories
2016In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro +2 more
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Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
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Current Status of NAND Memories and its Future Prospect with 3D NAND Technology
ECS Meeting Abstracts, 2012Abstract not Available.
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