Results 101 to 110 of about 2,676 (201)

layer granularity refresh for improving performance and lifetime of 3D NAND flash memory

, 2023
학위논문(석사) - 한국과학기술원 : 전산학부, 2023.2,[iv, 33 p. :]NAND flash refresh schemes have been proposed to mitigate retention errors by remapping pages before excessive errors occur in them.
Kim, Hyungsoon
core  

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source

HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash Memory

To successfully meet the various requirements of modern storage systems, NAND flash memory should be highly optimized by precisely tuning a huge number of internal operating parameters. Although 3D NAND flash memory succeeds in increasing the capacity of
Myungsuk Kim
core   +1 more source

COTS 3D NAND Flash: SEE Test Results and Challenges

, 2018
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product ...
Campola, Michael, LaBel, Kenneth A., Wilcox, Edward   +2 more
core  

Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory

IEEE Journal of the Electron Devices Society
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in that
Eunyoung Park, Hyun-Yong Yu
doaj   +1 more source

An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash

, 2018
Owing to the fast-growing demands of larger and faster NAND flash devices, new manufacturing techniques have accelerated the down-scaling process of NAND flash memory.
Yu-Pei Liang, Shuo-Han Chen; Yuan-Hao Chang; Yu-Pei Liang; Hsin-Wen Wei; Wei-Kuan Shih, Shou-Han Chen, Hsin-Wen Wei, Yuan-Hao Chang, Wei-Kuan Shih   +5 more
core   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

비휘발성 메모리 적용을 위한 시냅스 소자 제작과 3D NAND 플래시 메모리 시뮬레이션에 관한 연구

, 2020
MasterAs the demand for semiconductor memory increases, there is growing interest in research on the next-generation nonvolatile memory and efforts to resolve critical issues in memory devices.
장은경
core  

3D NAND memories: A low cost space radiation monitor?

, 2018
The thesis investigates the possible space application of a commercial 3D NAND memory as a radiation monitor. Literature has indicated that both traditional 2D and 3D flash memories are sensitive to ionizing radiation.
Van de Poel, Mathijs (author)
core