Results 101 to 110 of about 2,680 (203)

NAND Flash Memory Characterization [PDF]

, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
core  

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Micromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, Xuepeng Zhan   +6 more
doaj   +1 more source

비휘발성 메모리 적용을 위한 시냅스 소자 제작과 3D NAND 플래시 메모리 시뮬레이션에 관한 연구 [PDF]

, 2020
MasterAs the demand for semiconductor memory increases, there is growing interest in research on the next-generation nonvolatile memory and efforts to resolve critical issues in memory devices.
장은경
core  

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method. [PDF]

Nanomaterials (Basel), 2022
Nam K, Park C, Yoon JS, Yun H, Jang H, Cho K, Kang HJ, Park MS, Sim J, Choi HC, Baek RH.   +10 more
europepmc   +1 more source

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source

3D NAND memories: A low cost space radiation monitor? [PDF]

, 2018
The thesis investigates the possible space application of a commercial 3D NAND memory as a radiation monitor. Literature has indicated that both traditional 2D and 3D flash memories are sensitive to ionizing radiation.
Van de Poel, Mathijs (author)
core  

Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory

IEEE Journal of the Electron Devices Society
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in that
Eunyoung Park, Hyun-Yong Yu
doaj   +1 more source

Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories [PDF]

We present a detailed investigation of vertical charge loss in 3D NAND Flash memories down to the deep cryogenic regime. The extremely wide temperature range explored allows to derive clear experimental evidence for some important aspects of the vertical
D. G. Refaldi, N. Gagliazzi, L. Chiavarone, G. Malavena, C. Monzio Compagnoni, A. Sottocornola Spinelli   +5 more
core   +1 more source