Results 81 to 90 of about 2,676 (201)

Метод електронної мікроскопії для дослідження підповерхневих структур мікросхем типу 3D NAND

, 2023
Детальний аналіз принципів роботи 3D NAND пам'яті, її геометрії, архітектури та масштабування, рівня поверхні, надійності та управління помилками дозволяє визначити фундаментальні особливості цієї технології.
Мельник, Анастасія Богданівна
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수직 3D NAND Flash 메모리 신뢰성에 관한 전산모사 및 특성분석

, 2020
DoctorTo overcome the limitations of scaling down in the 2D planar NAND flash memory, 3D vertical NAND flash memory attracted attention, and many researches and mass production were carried out.
오현관
core  

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory

Micromachines
The program disturbance characteristics of three-dimensional (3D) vertical NAND flash cell array architecture pose a critical reliability challenge due to the lower unselected word line (WL) pass bias (Vpass) window. In other words, the key contradiction
Kaikai You, Lei Jin, Jianquan Jia, Zongliang Huo   +3 more
doaj   +1 more source

White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology

Journal of Microelectronic Manufacturing, 2019
In traditional 3D NAND design, peripheral circuit accounts for 20-30% of the chip real-estate, which reduces the memory density of flash memory. As 3D NAND technology stacks to 128 layers or higher, peripheral circuits may account for more than 50% of ...
Xiaoye Ding, Sicong Wang, Yi Zhou, Yanzhong Ma, Le Yang, Chi Chen   +5 more
doaj   +1 more source

Investigation of the Connection Schemes between Decks in 3D NAND Flash. [PDF]

Micromachines (Basel), 2023
Jia J, Jin L, You K, Zhu A.
europepmc   +1 more source

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

, 2017
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond, Seidleck, Christina, Phan, Anthony, Label, Kenneth, Kim, Hak, Wilcox, Edward, Chen, Dakai   +6 more
core  

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

, 2017
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage ...
LaBel, Kenneth, Seidleck, Christina, Ladbury, Raymond, Phan, Anthony, Kim, Hak, Chen, Dakai, Wilcox, Edward   +6 more
core  

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

3D NAND memory as radiation monitor

, 2019
This thesis explores the feasibility of using 3D NAND flash memory as space radiation monitor. Space radiation is composed by ionizing particles such as protons and ions, which can be harmful to electronics.
Lie, Sonny (author)
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NAND Flash Memory Characterization [PDF]

, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
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