Results 81 to 90 of about 26,595 (187)
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Chen, Dakai +6 more
core +1 more source
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]
, 2010 Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott +6 more
core
Magnetic Field‐Modulated Boolean Logic in Proteinoid‐ Fe3 O4 Hybrid Materials
Advanced Physics Research, Volume 5, Issue 5, May 2026.Proteinoid‐Fe3O4${\rm Fe}_3{\rm O}_4$. nanoparticle composites exhibit spontaneous electrical oscillations that emulate Boolean logic gates (AND, OR, XOR, NAND, NOR, NOT) under magnetic field modulation. External fields of 65.103 mT tune oscillatory behavior: 84 mT enhances amplitude while 103 mT suppresses it.
Panagiotis Mougkogiannis +1 more
wiley +1 more source
Central Dogma Cycle and Network: A Model for Cell Memory
BioEssays, Volume 48, Issue 5, May 2026.This paper revisits the Central Dogma, expanding it to the Central Dogma cycle (CDC) and Central Dogma cyclic network (CDCN). These models frame cellular memory as a system of logic‐based processes with an architecture of interconnected cycles that more accurately describe cellular information flow in cells. ABSTRACT This paper proposes an extension of
Martin R. Schiller
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 29, 9 April 2026.Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source
MicromachinesThe program disturbance characteristics of three-dimensional (3D) vertical NAND flash cell array architecture pose a critical reliability challenge due to the lower unselected word line (WL) pass bias (Vpass) window. In other words, the key contradiction
Kaikai You +3 more
doaj +1 more source
Investigation of the Connection Schemes between Decks in 3D NAND Flash. [PDF]
Micromachines (Basel), 2023 Jia J, Jin L, You K, Zhu A.
europepmc +1 more source
White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology
Journal of Microelectronic Manufacturing, 2019 In traditional 3D NAND design, peripheral circuit accounts for 20-30% of the chip real-estate, which reduces the memory density of flash memory. As 3D NAND technology stacks to 128 layers or higher, peripheral circuits may account for more than 50% of ...
Xiaoye Ding +5 more
doaj +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source