Results 91 to 100 of about 26,595 (187)

Stability and fairness in models with a multiple membership [PDF]

This article studies a model of coalition formation for the joint production (and finance) of public projects, in which agents may belong to multiple coalitions.
LE BRETON, Michel, MORENO-TERNERO, Juan D., SAVVATEEV, Alexei, WEBER, Shlomo   +3 more
core  

Optimizing Cell Structure to Improve Cell Characteristics in IGZO Channel-Based 3D NAND Flash With p-Type Gate

IEEE Access
For the first time, a novel IGZO channel-based 3D NAND Flash structure with an embedded p-type poly-Si injection layer is proposed, using integrated structural, material, and operational modifications to address the limitations of the conventional IGZO ...
Sungho Park, Youngho Jung, Daewoong Kang
doaj   +1 more source

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Micromachines
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost.
Xuesong Zheng, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, Xuepeng Zhan   +6 more
doaj   +1 more source

Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

IEEE Journal of the Electron Devices Society
In this paper, we propose a low-power stack-level programming scheme for ultrahigh stack 3D NAND flash memory. As the number of word lines (WLs) increases beyond 300 layers, the increased pass voltage leads to excessive power consumption and reliability ...
Kyungmin Lee, Gunwook Yoon, Seung Jae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method. [PDF]

Nanomaterials (Basel), 2022
Nam K, Park C, Yoon JS, Yun H, Jang H, Cho K, Kang HJ, Park MS, Sim J, Choi HC, Baek RH.   +10 more
europepmc   +1 more source

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source

Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory

IEEE Journal of the Electron Devices Society
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in that
Eunyoung Park, Hyun-Yong Yu
doaj   +1 more source

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]

Micromachines (Basel)
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc   +1 more source