Results 71 to 80 of about 26,595 (187)

An unusual titanosaur axis from the Upper Cretaceous of Brazil and its significance for sauropod anatomy and systematics

The Anatomical Record, EarlyView.
Abstract The Upper Cretaceous São José do Rio Preto Formation (Bauru Group, southeastern Brazil) has yielded a fragmentary but taxonomically diverse record of titanosaur sauropods, although elements from cervical series remain scarce. Here, we describe a nearly complete sauropod axis from the Vila Ventura Paleontological Area, representing an uncommon ...
Bruno A. Navarro, Jeffrey A. Wilson Mantilla, Jhonata H. A. Martins, Fabiano V. Iori, Leonardo S. Paschoa, Alberto B. Carvalho, Joseli M. Piranha, Hussam Zaher   +7 more
wiley   +1 more source

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +1 more source

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

Carbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee, Dongmin Kang, Sumin Hong, Hongjun Park, Myungju Woo, Woojin Jeong, Giha Lee, Junsang Lee, Sangkyun Kim, Jea‐Gun Park, Takamasa Mori, Yehwan Kim, Taeseup Song, Ungyu Paik   +13 more
wiley   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Particle Computation: Complexity, Algorithms, and Logic

, 2017
We investigate algorithmic control of a large swarm of mobile particles (such as robots, sensors, or building material) that move in a 2D workspace using a global input signal (such as gravity or a magnetic field). We show that a maze of obstacles to the
Becker, Aaron T., Demaine, Erik D., Fekete, Sándor P., Lonsforda, Jarrett, Morris-Wright, Rose   +4 more
core   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Introducing the Groundbreaking Design of the First n‐Input AND Gate Using an Optical‐MOSFET With a Revolutionary Structure of Pulse‐Shaped Gates

Advanced Photonics Research, Volume 7, Issue 5, May 2026.
The paper introduces the first logic gate implementation using optical metal–oxide‐semiconductor field‐effect transistor architecture, specifically designing two‐input and three‐input AND gates based on a silicene waveguide with pulse‐shaped gates. The key innovations include: (1) pulse‐shaped gate design.
Hamed Emami‐Nejad, Ali Mir
wiley   +1 more source

Coding scheme for 3D vertical flash memory

, 2015
Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction.
Bandic, Zvonimir, Kim, Yongjune, Kumar, B. V. K. Vijaya, Mateescu, Robert, Song, Seung-Hwan   +4 more
core   +1 more source

Multi‐Functional Adaptive Interfaces for Next‐Generation Wearable and Implantable Bioelectronics

Advanced Science, Volume 13, Issue 25, 4 May 2026.
Adaptive Biointerfaces: A comprehensive overview of next‐generation bioelectronics is presented, highlighting mechano‐adaptive and biophysiologically adaptive interfaces that enable stable, long‐term integration with living tissues. As illustrated in the image, adaptive interface strategies, including mechano‐adaptivity (e.g., injectability, shape ...
Jinhong Park, Junyoung Ha, Do Gyun Kim, Soo‐Hong Lee, Hyun‐Do Jung, Ja Hoon Koo, Gi Doo Cha, Dong Chan Kim   +7 more
wiley   +1 more source