Results 71 to 80 of about 3,095,076 (264)

3D HOP

, 2020
" 3DHOP (3D Heritage Online Presenter) is an open-source software package for the creation of interactive Web presentations of high-resolution 3D models, oriented to the Cultural Heritage field....
Consortium 3D SHS Team
core  

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Conservatoire des Données 3D SHS

, 2020
” Le Conservatoire National des Données 3D SHS est un environnement de sauvegarde sécurisé pour les données 3D, soutenu par Huma-Num.. …
Consortium 3D SHS Team
core  

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

Advanced Electronic Materials, EarlyView.
This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park, Yeong Joo Jo, Yong Hyun Kwon, Sang‐Woo Kim   +3 more
wiley   +1 more source

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory

, 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
core   +1 more source