Results 71 to 80 of about 2,680 (203)
3D NAND-технология для изготовления flash-памяти [PDF]
В работе приведен краткий обзор процесса развития микроэлектроники, рассмотрены возможности и перспективы использования 3D NAND-технологии для изготовления flash -памяти и других средств электронной и вычислительной ...
Котов, Е. Г.
core
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond +6 more
core +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma +2 more
doaj +1 more source
Ising Solver Using Vertical NAND Flash Memory
Commercial V‐NAND flash memory is repurposed as a discrete‐time Ising solver by exploiting in‐memory current summation and read‐voltage‐controlled intrinsic noise. The system implements Hopfield neural‐network updates with simulated‐annealing‐like behavior, solving max‐cut problems with high accuracy and energy efficiency while using mass‐produced ...
Sung‐Ho Park +7 more
wiley +1 more source
Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory [PDF]
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage ...
LaBel, Kenneth +6 more
core +1 more source
Abstract The Upper Cretaceous São José do Rio Preto Formation (Bauru Group, southeastern Brazil) has yielded a fragmentary but taxonomically diverse record of titanosaur sauropods, although elements from cervical series remain scarce. Here, we describe a nearly complete sauropod axis from the Vila Ventura Paleontological Area, representing an uncommon ...
Bruno A. Navarro +7 more
wiley +1 more source
3D NAND memory as radiation monitor [PDF]
This thesis explores the feasibility of using 3D NAND flash memory as space radiation monitor. Space radiation is composed by ionizing particles such as protons and ions, which can be harmful to electronics.
Lie, Sonny (author)
core

