Results 51 to 60 of about 2,680 (203)

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo   +4 more
doaj   +1 more source

Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND [PDF]

, 2023
Recently the demand for higher drain current and scalable gate stack thickness arises for next-generation 3D NAND flash, due to the physical limit of cells and stacked layers over 1,000. While the N-channel ferroelectric field-effect-transistor (n-FEFET)
Kim, Sanghyeon, Kuk, Songhyeon, Kim, Bong Ho, Han, Jae-Hoon, Kim, Junpyo   +4 more
core   +1 more source

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

IEEE Access, 2021
In charge-trap (CT) three-dimensional (3D) NAND flash memory, the transition layer between Si3N4 CT layer and SiO2 tunneling layer is inevitable, and the defects in the transition layer are expected to cause both lateral and vertical charge loss.
Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen   +3 more
doaj   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND

IEEE Access, 2020
3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong, Zhiguo Zhao, Jun Luo, Zhiliang Xia, Xiaojing Su, Libin Zhang, Chunlong Li, Zongliang Huo   +7 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Prolonging 3D NAND SSD lifetime via read latency relaxation [PDF]

, 2021
The adoption of 3D NAND has significantly increased the SSD density; however, 3D NAND density-increasing techniques, such as extensive stacking of cell layers, can amplify read disturbances and shorten SSD lifetime.
Chun-Yi Liu, Liu, Chun-Yi, Lee, Yunju, Choi, Wonil, Mahmut Taylan Kandemir, Wonil Choi, Yunju Lee, Jung, Myoungsoo, Kandemir, Mahmut Taylan, Myoungsoo Jung   +9 more
core   +1 more source

Spectrally Selective Bipolar Self‐Powered Opto‐Synaptic Responses in Tandem 2D van Der Waals Ferroelectric Heterojunctions

Advanced Functional Materials, EarlyView.
Tandem 2D vdW ferroelectric heterojunctions enable spectrally selective, self‐powered bipolar opto‐synaptic responses for retinal ON/OFF bipolar cell emulation and wavelength‐programmable logic operations. This work establishes vdW ferroelectric heterojunctions as a compelling materials platform for energy‐efficient, adaptive, and human‐like artificial
Rajiv Kumar Pandey, Chang Yong Park, Cheolhwa Jang, Taeho Kang, Sungjoo Lee   +4 more
wiley   +1 more source

Optoelectronic Nanofluidic Neural Networks for Ionic Computing

Advanced Materials, EarlyView.
An ion‐based optoelectronic nanofluidic memristor enables neuromorphic computing in aqueous environments. With tunable ionic memory and multimodal synaptic plasticity, it realizes densely connected ionic neural networks capable of image classification, motion prediction, logic computation, and real‐time in‐sensor computing, advancing fully connected ...
Yaxin Huang, Zhiyuan Du, Changjin Wu, Binglin Zeng, Yingnan Cao, Mingliang Li, Liren Zhang, Qingxin Guo, Chao Huang, Can Li, Jinyao Tang   +10 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source