Results 31 to 40 of about 3,095,076 (264)
IEEE Journal of the Electron Devices Society, 2022 In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
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Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
IEEE Access, 2022 The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
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Advanced Intelligent Systems, 2023 Herein, the impact of cross‐temperature on 3D NAND flash memory is modeled by considering adjacent cells using machine learning. The cells comprising NAND flash memory exhibit diverse states and connectivity patterns.
Kyeongrae Cho +8 more
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Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2021 Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2018,
Ting Cheng +13 more
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Integration of Reconfigurable p-Bit and 1R Crossbar Array for Memristive Probabilistic Computing. [PDF]
Adv Sci (Weinh)A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Soh K +7 more
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IEEE Access, 2023 To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of
Yun-Jae Oh +4 more
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Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
Journal of Microelectronic Manufacturing, 2020 3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang +4 more
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Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
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Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics ...
Xinlei Jia +11 more
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
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