Results 31 to 40 of about 26,595 (187)
Offset-compensated comparator with full-input range in 150nm FDSOI CMOS-3d technology [PDF]
, 2010 This paper addresses an offset-compensated comparator with full-input range in the 150nm FDSOI CMOS- 3D technology from MIT- Lincoln Laboratory. The comparator discussed here makes part of a vision system.
Brea Sánchez, Víctor Manuel +5 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj +1 more source
Novel Pattern-Centric Solution for XtackingTM AFM Metrology
Journal of Microelectronic Manufacturing, 2019 3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang +6 more
doaj +1 more source
IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu +4 more
doaj +1 more source
Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]
, 2010 Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Aitken, Robert +4 more
core +1 more source
Memories - Materials, Devices, Circuits and Systems, 2023 In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim +6 more
doaj +1 more source
Ratchet Cellular Automata [PDF]
, 2002 In this work we propose a ratchet effect which provides a general means of performing clocked logic operations on discrete particles, such as single electrons or vortices. The states are propagated through the device by the use of an applied AC drive. We
C. Buzea +6 more
core +1 more source
3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
AIP Advances, 2022 As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu +7 more
doaj +1 more source
Combinatorial Control through Allostery [PDF]
, 2018 Many instances of cellular signaling and transcriptional regulation involve switch-like molecular responses to the presence or absence of input ligands. To understand how these responses come about and how they can be harnessed, we develop a statistical ...
Einav, Tal +3 more
core +6 more sources