Results 31 to 40 of about 2,680 (203)
Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 Poly-Si channels need well passivated by using hydrogen passivation process in 3D NAND flash memories for better poly-Si quality with low trap density.
Xinshuai Shen +7 more
doaj +1 more source
Numerical simulation of RDF and RTN in 3D NAND [PDF]
, 2021 LAUREA MAGISTRALELa legge di Moore fa sì che i produttori di semiconduttori, di chip di memoria e di logica, possano ridurre i costi dei prodotti e incrementare le prestazioni aumentando la densità di transistor.
Chen, Ziyu
core
Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2020 As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics ...
Xinlei Jia +11 more
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A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
doaj +1 more source
Forensic Analysis of the Nintendo 3DS NAND
Digital Investigation, 2019 Abstract Games consoles present a particular challenge to the forensics investigator due to the nature of the hardware and the inaccessibility of the file system. Many protection measures are put in place to make it deliberately difficult to access raw data in order to protect intellectual property, enhance digital rights management of software and ...
Gus Pessolano +3 more
openaire +2 more sources
Modello del DCP nelle memorie 3D NAND Flash [PDF]
, 2022 LAUREA MAGISTRALELa crescente volontà di aumentare la densità di dati immagazzinabili, in dispositivi di dimensioni sempre più ridotte e più economici da fabbricare, ha condotto la ricerca verso la miniaturizzazione delle memorie NAND.
MONCELLI, VITO FRANCESCO
core
Analysis of HBM Failure in 3D NAND Flash Memory [PDF]
, 2022 Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper.
Xin Wang +6 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2023 The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj +1 more source
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND [PDF]
, 2023 Continuation of the scaling and increase of the storage density of the 3D NAND requires minimization and control of variability sources. Among the various reliability challenges, cross-temperature phenomena are considered as one of the reliability ...
Maji R. +12 more
core +1 more source
IEEE Access, 2023 When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj +1 more source