Results 41 to 50 of about 2,680 (203)

Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
doaj   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
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A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation

Memories - Materials, Devices, Circuits and Systems, 2023
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative ...
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song   +6 more
doaj   +1 more source

Characterizing 3D Charge Trap NAND Flash: Observations, Analyses and Applications [PDF]

, 2018
In the 3D era, the Charge Trap (CT) NAND flash is employed by mainstream products, thus having a deep understanding of its characteristics is becoming increasingly crucial for designing flash-based systems. In this paper, to enable such understanding, we
Yue Zhu, You Zhou, Fei Wu, Zhou, You,, Weizhen Kong, Xiong, Qin,, Kong, Weizhen,, Wu, Fei,, Changsheng Xie, Xie, Changsheng,, Zhonghai Lu, Lu, Zhonghai,, Qin Xiong, Zhu, Yue,   +13 more
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Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory

IEEE Access, 2022
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho   +3 more
doaj   +1 more source

Adaptive Pulse Programming Scheme for Improving the V_th Distribution and Program Performance in 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo   +6 more
doaj   +1 more source

Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology [PDF]

, 2022
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed.
Gerardin S., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Pesce A.   +6 more
core   +1 more source

An efficient built‐in error detection methodology with fast page‐oriented data comparison in 3D NAND flash memories

Electronics Letters, 2022
This letter presents an efficient built‐in error detection methodology for 3D NAND flash memories, in which fast page‐oriented data comparison and column parallel error detection are firstly proposed.
HM. Cao, F. Liu, Q. Wang, ZC. Du, L. Jin, ZL. Huo   +5 more
doaj   +1 more source

Analysis of the Down-coupling phenomenon in 3D NAND flash memories [PDF]

, 2020
LAUREA MAGISTRALELa tecnologia NAND flash rappresenta una delle principali soluzioni nel mercato delle memorie non volatili. La costante richiesta di performance migliori e un maggiore risparmio di spazio ha spinto le industrie di semiconduttori a ...
GIULIANINI, MATTIA
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