Results 41 to 50 of about 26,595 (187)

Delay test for diagnosis of power switches [PDF]

, 2014
Power switches are used as part of power-gating technique to reduce leakage power of a design. To the best of our knowledge, this is the first work in open-literature to show a systematic diagnosis method for accurately diagnosingpower switches.
Al-Hashimi, Bashir, Chakrabarty, Krishnendu, Khursheed, Syed Saqib, Shi, Kan, Wilson, Peter R.   +4 more
core   +2 more sources

Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells [PDF]

, 2005
A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction.
Atwater, Harry A., Kayes, Brendan M., Lewis, Nathan S.   +2 more
core   +1 more source

Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory

IEEE Access, 2022
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho   +3 more
doaj   +1 more source

Biomimetic microelectronics for regenerative neuronal cuff implants [PDF]

, 2015
Smart biomimetics, a unique class of devices combining the mechanical adaptivity of soft actuators with the imperceptibility of microelectronics, is introduced.
Baunack, Stefan, Karnaushenko, Daniil, Karnaushenko, Dmitriy D, Koch, Britta, Makarov, Denys, Meyer, Anne K, Münzenrieder, Niko, Petti, Luisa, Schmidt, Oliver G, Tröster, Gerhard   +9 more
core   +1 more source

Adaptive Pulse Programming Scheme for Improving the V_th Distribution and Program Performance in 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo   +6 more
doaj   +1 more source

An efficient built‐in error detection methodology with fast page‐oriented data comparison in 3D NAND flash memories

Electronics Letters, 2022
This letter presents an efficient built‐in error detection methodology for 3D NAND flash memories, in which fast page‐oriented data comparison and column parallel error detection are firstly proposed.
HM. Cao, F. Liu, Q. Wang, ZC. Du, L. Jin, ZL. Huo   +5 more
doaj   +1 more source

Constructing chiral MOFs by functionalizing 4,2′:6′,4″-terpyridine with long-chain alkoxy domains: rare examples of neb nets [PDF]

, 2016
Reactions of 4′-(4- n alkyloxyphenyl)-4,2′:6′,4″-terpyridines (alkyl = hexyl or nonyl) with CoIJNCS) 2 lead to three structurally characterized chiral 3D assemblies which adopt rare neb topologies.
Coles, Simon, Constable, Edwin C., Housecroft, Catherine E., Klein, Y. Maximilian, Pitak, Mateusz, Prescimone, Alessandro   +5 more
core   +1 more source

Recent Progress on 3D NAND Flash Technologies [PDF]

Electronics, 2021
Since 3D NAND was introduced to the industry with 24 layers, the areal density has been successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers. The physical scaling of XYZ dimensions including layer stacking and footprint scaling enabled the density scaling. Logical scaling has been successfully realized, too.
openaire   +1 more source

Electroactive Metal–Organic Frameworks Enabling Unidirectional Electrochemical Capacitors and Logic Gates (MOF‐CAPode)

Angewandte Chemie, EarlyView.
MOF‐CAPodes are introduced by pairing various p‐MOFs with an n‐MOF as electrode materials in a battery‐like assembly. The devices achieve high figures of merit (RRI = 23.5; RRII = 94.4%) and perform excellently in prototypical logic gates (AND, OR) highlighting a new direction for ionological systems based on electroactive MOFs.
Tim Engelhardt, Leonid Shupletsov, Christin Gellrich, Cécilia Bauden, Przemyslaw Galek, Ahmed Bahrawy, Sonila Xhafa, Irena Senkovska, Julia Grothe, Stefan Kaskel   +9 more
wiley   +2 more sources

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo   +4 more
doaj   +1 more source