Results 41 to 50 of about 2,676 (201)

Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory

IEEE Access, 2022
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape.
Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho   +3 more
doaj   +1 more source

Adaptive Pulse Programming Scheme for Improving the V_th Distribution and Program Performance in 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
For triple-level or quad-level 3D NAND flash memory, narrowing the Vth distribution of each state without influencing page program performance is one of the challenges.
Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo   +6 more
doaj   +1 more source

Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology [PDF]

, 2022
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed.
Gerardin S., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Pesce A.   +6 more
core   +1 more source

Secondary Particles Generated by Protons in 3D NAND Flash Memories

, 2022
We studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions.
Gerardin S., Santin G., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Muschitiello M., Pesce A.   +8 more
core   +1 more source

An efficient built‐in error detection methodology with fast page‐oriented data comparison in 3D NAND flash memories

Electronics Letters, 2022
This letter presents an efficient built‐in error detection methodology for 3D NAND flash memories, in which fast page‐oriented data comparison and column parallel error detection are firstly proposed.
HM. Cao, F. Liu, Q. Wang, ZC. Du, L. Jin, ZL. Huo   +5 more
doaj   +1 more source

Numerical simulation of RDF and RTN in 3D NAND

, 2021
LAUREA MAGISTRALELa legge di Moore fa sì che i produttori di semiconduttori, di chip di memoria e di logica, possano ridurre i costi dei prodotti e incrementare le prestazioni aumentando la densità di transistor.
Chen, Ziyu
core  

Analysis of the Down-coupling phenomenon in 3D NAND flash memories [PDF]

, 2020
LAUREA MAGISTRALELa tecnologia NAND flash rappresenta una delle principali soluzioni nel mercato delle memorie non volatili. La costante richiesta di performance migliori e un maggiore risparmio di spazio ha spinto le industrie di semiconduttori a ...
GIULIANINI, MATTIA
core  

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE Journal of the Electron Devices Society
Self-organizing Map (SOM) neural network is a prominent algorithm in unsupervised machine learning, which is widely used for data clustering, high-dimensional visualization, and feature extraction.
Anyi Zhu, Lei Jin, Wen Zhou, Tianchun Ye, Zongliang Huo   +4 more
doaj   +1 more source

Analysis of HBM Failure in 3D NAND Flash Memory

, 2022
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper.
Xin Wang, Biruo Song, Lei Jin, Fei Liu, Zhiguo Li, Zongliang Huo, Xiang Fu   +6 more
core   +1 more source

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

, 2023
Continuation of the scaling and increase of the storage density of the 3D NAND requires minimization and control of variability sources. Among the various reliability challenges, cross-temperature phenomena are considered as one of the reliability ...
Maji R., Kim J. B., Padovani A., Pesic M., Rollo T., Yim D. K., Saly M., Micheloni R., Bae Y. H., Larcher L., Enman L., Beltrando B., Zambelli C.   +12 more
core   +1 more source