Results 41 to 50 of about 3,095,076 (264)

Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic. [PDF]

Adv Sci (Weinh)
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Kim CH, Kim MS, Rhim JB, Kim TI, Kwon HI, Park IJ.   +5 more
europepmc   +2 more sources

A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories [PDF]

, 2012
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage ...
C. Zambelli, P. Olivo, Indaco, Marco, Olivo P., M. Indaco, BERTOZZI, Davide, Zambelli, C., Di Carlo, Stefano, Olivo, P., Bertozzi D., P. Prinetto, D. Bertozzi, M. Fabiano, ZAMBELLI, Cristian, OLIVO, Piero, Fabiano, Michele, Prinetto, Paolo Ernesto, S. Di Carlo, Bertozzi, D., Zambelli C.   +19 more
core   +1 more source

Forensic Analysis of the Nintendo 3DS NAND

Digital Investigation, 2019
Abstract Games consoles present a particular challenge to the forensics investigator due to the nature of the hardware and the inaccessibility of the file system. Many protection measures are put in place to make it deliberately difficult to access raw data in order to protect intellectual property, enhance digital rights management of software and ...
Gus Pessolano, Huw Read, Iain Sutherland, Konstantinos Xynos   +3 more
openaire   +3 more sources

EDACs and test integration strategies for NAND flash memories [PDF]

, 2010
Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Piazza, R., Stefano Di Carlo, Michele Fabiano, Politecnico Di Torino, Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Roberto Piazza, Piazza R., Di Carlo, Stefano   +9 more
core   +1 more source

Analytical Modeling of Threshold Voltage and Subthreshold Slope for 3-D NAND Flash Memory With a Non-Uniform Doping Profile

IEEE Journal of the Electron Devices Society, 2023
The emergence of data-driven technologies including Internet of Things (IoT), artificial intelligence (AI), and cloud computing has led to a surge in data generation and mining.
Amit Kumar, Shubham Sahay
doaj   +1 more source

Modello del DCP nelle memorie 3D NAND Flash [PDF]

, 2022
LAUREA MAGISTRALELa crescente volontà di aumentare la densità di dati immagazzinabili, in dispositivi di dimensioni sempre più ridotte e più economici da fabbricare, ha condotto la ricerca verso la miniaturizzazione delle memorie NAND.
MONCELLI, VITO FRANCESCO
core  

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

IEEE Access, 2023
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj   +1 more source

Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash

IEEE Journal of the Electron Devices Society, 2021
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was ...
Dan Wu, Hailong You, Xiaoguang Wang, Shujing Zhong, Qi Sun   +4 more
doaj   +1 more source

Novel Pattern-Centric Solution for XtackingTM AFM Metrology

Journal of Microelectronic Manufacturing, 2019
3D NAND (three-dimensional NAND type) has rapidly become the standard technology for enterprise flash memories, and is also gaining widespread use in other applications.
Sicong Wang, Jian Mi, Abhishek Vikram, Gao Xu, Guojie Chen, Liming Zhang, Pan Liu   +6 more
doaj   +1 more source

3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

AIP Advances, 2022
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann ...
Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +7 more
doaj   +1 more source