Results 61 to 70 of about 26,595 (187)

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

IEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni   +4 more
doaj   +1 more source

Rethinking Split Manufacturing: An Information-Theoretic Approach with Secure Layout Techniques

, 2017
Split manufacturing is a promising technique to defend against fab-based malicious activities such as IP piracy, overbuilding, and insertion of hardware Trojans. However, a network flow-based proximity attack, proposed by Wang et al.
Ashraf, Mohammed, Garg, Siddharth, Knechtel, Johann, Patnaik, Satwik, Sengupta, Abhrajit, Sinanoglu, Ozgur   +5 more
core   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

A Behavioral Compact Model of 3D NAND Flash Memory

CoRR, 2018
We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap ...
Shubham Sahay, Dmitri B. Strukov
openaire   +2 more sources

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

Advanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song, Changhyeon Han, Joonhyeok Choi, Jongwoo Lee, Hyun‐min Kim, Wongi Hong, Ujin Kim, Sung‐Tae Lee, Daewoong Kwon   +8 more
wiley   +1 more source

Nonvolatile memory with molecule-engineered tunneling barriers

, 2008
We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion.
Baik S. J., Daniel J. Ruebusch, Edwin C. Kan, Hassan Raza, Kamran Afshari, Lee C., Lue H.-T., Ohba R., Ohba R., Pon H., Tuo-Hung Hou   +10 more
core   +1 more source

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +1 more source