Results 61 to 70 of about 2,680 (203)
A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
Advanced Science, EarlyView.A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu +6 more
wiley +1 more source
Метод електронної мікроскопії для дослідження підповерхневих структур мікросхем типу 3D NAND [PDF]
, 2023 Детальний аналіз принципів роботи 3D NAND пам'яті, її геометрії, архітектури та масштабування, рівня поверхні, надійності та управління помилками дозволяє визначити фундаментальні особливості цієї технології.
Мельник, Анастасія Богданівна
core +1 more source
Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays
IEEE Journal of the Electron Devices Society, 2023 In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena +4 more
doaj +1 more source
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
Advanced Science, EarlyView.A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
A Behavioral Compact Model of 3D NAND Flash Memory
CoRR, 2018 We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap ...
Shubham Sahay, Dmitri B. Strukov
openaire +2 more sources
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
수직 3D NAND Flash 메모리 신뢰성에 관한 전산모사 및 특성분석 [PDF]
, 2020 DoctorTo overcome the limitations of scaling down in the 2D planar NAND flash memory, 3D vertical NAND flash memory attracted attention, and many researches and mass production were carried out.
오현관
core
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source