Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories [PDF]
Micromachines, 2021 Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories.
Fei Chen +6 more
doaj +2 more sources
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors [PDF]
Sensors, 2023 Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling,
Hanshui Fan +6 more
doaj +2 more sources
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory [PDF]
Micromachines, 2023 With gate length (Lg) and gate spacing length (Ls) shrinkage, the cell-to-cell z-interference phenomenon is increasingly severe in 3D NAND charge-trap memory. It has become one of the key reliability concerns for 3D NAND cell scaling.
Jianquan Jia +3 more
doaj +2 more sources
A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories [PDF]
Micromachines, 2021 Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology.
Michele Favalli +4 more
doaj +2 more sources
Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash [PDF]
Micromachines, 2023 The bit density is generally increased by stacking more layers in 3D NAND Flash. Lowering dopant activation of select transistors results from complex integrated processes.
Tao Yang +8 more
doaj +2 more sources
Embodied Carbon Footprint of 3D NAND Memories
Proceedings of the 22nd ACM International Conference on Computing Frontiers: Workshops and Special SessionsThis study presents a novel model for estimating the embodied carbon footprint of Solid-State Drives (SSDs), focusing on the relationship between manufacturing complexity and environmental impact.
Olivier Weppe +6 more
semanticscholar +3 more sources
Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]
Micromachines (Basel)With vertical stacking, 3D NAND’s flash memory can achieve continuous capacity growth. However, the endurance variation between the stacked layers becomes more and more significant due to process variation, which will lead to the underutilization of many
Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc +2 more sources
Applied SciencesThis study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae +2 more
doaj +2 more sources
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
Computers, 2017 We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field.
Christian Monzio Compagnoni +2 more
exaly +3 more sources
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]
Advanced ScienceMultilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim +12 more
doaj +2 more sources