Results 21 to 30 of about 2,680 (203)

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems [PDF]

Advanced Science
Multilevel storage and low‐voltage operation position ferroelectric transistors as promising candidates for next‐generation nonvolatile memory. Among them, gate‐injection‐type ferroelectric transistors offer improved vertical scalability and power ...
Giuk Kim, Sangho Lee, Hyojun Choi, Yangjin Jung, Woongjin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Mincheol Shin, Jinho Ahn, Sanghun Jeon   +12 more
doaj   +2 more sources

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory [PDF]

Eng
In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim, Gyeongseob Seo, Myungsuk Kim   +2 more
doaj   +2 more sources

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure [PDF]

Scientific Reports
This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect.
Yongha Kim, Seungjun Ryu, Sungryung Lee
doaj   +2 more sources

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

IEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang, Ik-Jyae Kim, Cheon An Lee, Chiweon Yoon, Jang-Sik Lee   +4 more
doaj   +1 more source

Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile

IEEE Access, 2022
The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become an integral part of the data warehouses ...
Amit Kumar, Raushan Kumar, Shubham Sahay
doaj   +1 more source

Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

IEEE Journal of the Electron Devices Society, 2021
Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata et al., 2007, Lee et al., 2018,
Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo   +13 more
doaj   +1 more source

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer

IEEE Access, 2023
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of
Yun-Jae Oh, Inyoung Lee, Yunejae Suh, Daewoong Kang, Il Hwan Cho   +4 more
doaj   +1 more source

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory [PDF]

, 2021
3D NAND flash memory faces unprecedented complicated interference than planar NAND flash memory, resulting in more concern regarding reliability and performance. Stronger error correction code (ECC) and adaptive reading strategies are proposed to improve
Fei Wu, Meng Zhang, Jian Zhou, Wu, Fei,, Changsheng Xie, Zhang, Meng,, Liu, Weihua,, Yang, Chengmo,, Xie, Changsheng,, Weihua Liu, Zhonghai Lu, Lu, Zhonghai,, Chengmo Yang, Wang, Yu,, Yu Wang, Zhou, Jian,   +15 more
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Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing

Journal of Microelectronic Manufacturing, 2020
3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang, Jun Xu, Sicong Wang, Yi Zhou, Jian Mi   +4 more
doaj   +1 more source

Secondary Particles Generated by Protons in 3D NAND Flash Memories [PDF]

, 2022
We studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions.
Gerardin S., Santin G., Beltrami S., Costantino A., Ferlet-Cavrois V., Bagatin M., Paccagnella A., Muschitiello M., Pesce A.   +8 more
core   +1 more source