Results 111 to 120 of about 1,913 (176)

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. [PDF]

Nat Commun
Zou T, Heo S, Reo Y, Ryu GS, Lee J, Kim M, Kim S, Byeon G, Park JS, Xu W, Noh YY.   +10 more
europepmc   +1 more source

Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review. [PDF]

Biomimetics (Basel)
Im J, Pak S, Woo SY, Shin W, Lee ST.
europepmc   +1 more source

Quantitative analysis of lung microwave ablation zone volume and shape. [PDF]

Eur Radiol Exp
Salkin RS, Dev AB, Alexander ES, Moussa A, Sotirchos V, Sofocleous CT, Maroun G, Youssef EW, Ghosn M, Petre EN, Solomon SB, Keshavamurthy KN, Ziv E.   +12 more
europepmc   +1 more source

Stretchable complementary integrated electronics based on elastic dual-type transistors. [PDF]

Sci Adv
Zhang Y, Sim K, Shim H, Ershad F, Patel S, Guan Y, Yu C.   +6 more
europepmc   +1 more source

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Modeling and Optimization of Advanced 3D NAND Memory

2020 Device Research Conference (DRC), 2020
Development of a new complex technology such as 3D NAND requires significant efforts in terms of materials screening, process tuning, and device design leading to fabrication and characterization of many test wafers with significant time-to-market cost. In this context, modeling can help accelerate 3D NAND technology development.
Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli   +7 more
openaire   +1 more source

3D NAND Flash Memories

2018
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
Rino Micheloni, Seiichi Aritome, Luca Crippa   +2 more
openaire   +1 more source

An alternative to Tungsten in 3D-NAND technology

2021 IEEE International Interconnect Technology Conference (IITC), 2021
As the number of wordlines has reached 128 layers in the realm of 3D-NAND, several challenges have emerged to produce these structures. Among these is metallization of the connection made with Tungsten. This paper explores Nickel alloys as an alternative metal. Several key data are presented to validate this new concept.
Suhr Dominique, Mevellec Vincent, Thiam Mikailou, Idier Jonathan, Raynal Frederic, Berthon Hermine, Perrault Elisa, Hann Nicolas, Doussot Celine, Kim Yeeseul, Baus Mathilde, Lakhdari Amine, Guittet Gaelle, Caillard Louis   +13 more
openaire   +1 more source

3D RRAM design and benchmark with 3d NAND FLASH

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device, circuit to system level. Due to the voltage drop and sneak path problem, the sub-array size of the
Pai-Yu Chen, Cong Xu, Yuan Xie, Shimeng Yu   +3 more
openaire   +1 more source

Reliability of Mo as Word Line Metal in 3D NAND

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
We evaluate the reliability of Mo as word line metal for 3-D NAND Flash devices, by mimicking the stacked architecture using planar capacitors with SiO 2 /Al 2 O 3 and SiO 2 /HfO 2 dielectric stacks. By combining TDDB and TVS measurements with simulations, we show that Mo does not drift in the two examined stacks.
Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen   +5 more
openaire   +1 more source