Results 161 to 170 of about 2,676 (201)
Some of the next articles are maybe not open access.
2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
openaire +1 more source
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
openaire +1 more source
3D Charge Trap NAND Flash Memories
ECS Transactions, 2016This chapter starts off with 2 vertical channel architectures named BiCS (Bit Cost Scalable) and P-BiCS (Pipe-Shaped BiCS), respectively. BiCS was proposed for the first time by Toshiba in 2007, and another version called P-BiCS was presented in 2009 to improve retention, source selector performances and source line resistance.
Luca Crippa, Rino Micheloni
openaire +2 more sources
3D NAND Flash Status and Trends
2022 IEEE International Memory Workshop (IMW), 2022Lars Heineck, Jin Liu
openaire +1 more source
Error Generation for 3D NAND Flash Memory
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022Weihua Liu +4 more
openaire +1 more source
Scaling directions for 2D and 3D NAND cells
2012 International Electron Devices Meeting, 2012This paper describes NAND cell scaling directions for 20nm and beyond. Many of the 2D NAND cell scaling challenges can be resolved by a planar floating gate (FG) cell. Scaling directions and key technology requirements for 3D NAND are also discussed.
Akira Goda, Krishna Parat
openaire +1 more source
Current Status of NAND Memories and its Future Prospect with 3D NAND Technology
ECS Meeting Abstracts, 2012Abstract not Available.
openaire +1 more source
Etching of Silicon Nitride in 3D NAND Structures
ECS Meeting Abstracts, 20153D NAND structures present a unique difficulty in semiconductor device manufacturing. One method of production consists of cylindrical structures made of alternating layers of silicon dioxide (SiO2) and silicon nitride (SiN) with a core of SiO2. As part of the device manufacturing process the SiN is etched away, leaving the SiO2 core with disc-shaped
Derek Bassett +2 more
openaire +1 more source
Etch Challenges for 3D NAND Flash Technology
ECS Meeting Abstracts, 2014Current 2D NAND scaling is approaching technology limitation in both lithography and device performance arena. To address the lithography challenges at the 1x nodes and the well-known scaling issues associated with planar NAND, 3D flash technology is being developed and is expected to greatly reduce the lithography burden albeit shifting it to ...
Anisul Haque Khan +4 more
openaire +1 more source
3D NAND Scaling in the next decade
2022 International Electron Devices Meeting (IEDM), 2022Russ Meyer +2 more
openaire +1 more source
3D Floating Gate NAND Flash Memories
2016Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
openaire +1 more source