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3D Floating Gate NAND Flash Memories
2016Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
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Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash
Journal of Nanoscience and Nanotechnology, 2013The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n(+)-poly-Si based ultra-thin channel and S/D with identical doping concentrations.
Jinho, Oh +3 more
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Computational Storage for 3D NAND Flash Error Recovery Flow Prediction
2023The Computational Storage paradigm is attracting increasing interest in many applications because of the performance and the energy-efficiency improvement, given by the tight coupling of processing elements with Solid State Drives through proper interconnection fabrics.
Zambelli C. +4 more
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Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories
Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022Abstract We performed the first-principles calculations for a nitrogen vacancy (V N) and hydrogen(H) atom in β-Si3N4 to clarify the atomistic origin of charge traps in silicon nitride (SiN) layers and charge-trapping mechanism used for 3D NAND flash memories.
Fugo Nanataki +5 more
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Etch Challenges for 3D NAND Flash Technology
ECS Meeting Abstracts, 2014Current 2D NAND scaling is approaching technology limitation in both lithography and device performance arena. To address the lithography challenges at the 1x nodes and the well-known scaling issues associated with planar NAND, 3D flash technology is being developed and is expected to greatly reduce the lithography burden albeit shifting it to ...
Anisul Haque Khan +4 more
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Reliability of 3D NAND Flash Memories
2016In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical ...
GROSSI, Alessandro +2 more
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Vertical-channel stacked array (VCSTAR) for 3D NAND flash memory
2011 International Semiconductor Device Research Symposium (ISDRS), 2011Abstract A novel three-dimensional (3D) NAND flash memory, VCSTAR (Vertical-Channel STacked ARray), is investigated. The proposed device is a vertical channel structure having stacked word-lines to achieve high memory density without shrinking cell channel length.
Se Hwan Park +4 more
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2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
This paper analyzes the system-level performance of Storage Class Memory (SCM) / NAND flash hybrid solid-state drive (SSD). Four types of NAND flash, 1) 3-dimentional (3D) charge-trap (CT) Triple-Level Cell (TLC) [1], 2) 3D floating-gate (FG) TLC [2], 3) 2-dimentional (2D) FG TLC, and 4) 2D FG Multi-Level Cell (MLC) NAND flash are compared for various ...
Mamoru Fukuchi +3 more
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This paper analyzes the system-level performance of Storage Class Memory (SCM) / NAND flash hybrid solid-state drive (SSD). Four types of NAND flash, 1) 3-dimentional (3D) charge-trap (CT) Triple-Level Cell (TLC) [1], 2) 3D floating-gate (FG) TLC [2], 3) 2-dimentional (2D) FG TLC, and 4) 2D FG Multi-Level Cell (MLC) NAND flash are compared for various ...
Mamoru Fukuchi +3 more
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2015
Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Because NAND Flash possesses several advantages such as very high density, low cost, low power consumption, high programming and reading throughput, and compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics.
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Overview of 3D NAND Flash and progress of split-page 3D vertical gate (3DVG) NAND architecture
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014This paper provides an overview of various 3D NAND Flash memory devices and a comprehensive understanding of 3DVG architectures. Compared with conventional floating gate Flash memory devices, charge-trapping (CT) devices provide much simpler 3D process integration with smaller footprint thus are naturally suitable for 3D NAND.
Pei-Ying Du +4 more
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