A Study of Invalid Programming in 3D QLC NAND Flash Memories
Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, 2023 Hongyang Dang +3 more
openaire +1 more source
Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory
The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states.
Chaoming Liu +6 more
core +1 more source
Analisi delle dinamiche di stringa indotte da GIDL in matrici di memoria NAND Flash 3D
, 2017 LAUREA MAGISTRALEIn questo lavoro di tesi saranno studiate le dinamiche di stringa indotte da GIDL al selettore in matrici di memoria NAND Flash 3D a canale verticale.
MALAVENA, GERARDO
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Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation. [PDF]
SmallHwang H, Youn S, Park J, Yu D, Kim H.
europepmc +1 more source
Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]
Nanoscale AdvZhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc +1 more source
Neutron-induced Single Event Effects in 3D Managed NAND Memories
The sensitivity of 3D managed NAND Flash memories to single event effects induced by wide-energy spectrum neutrons has been investigated. The analysis considers both the multi-chip architecture and the role of memory management data structures in shaping
Bagatin, M. +6 more
core +1 more source
3D NAND memory as radiation monitor
, 2019 This thesis explores the feasibility of using 3D NAND flash memory as space radiation monitor. Space radiation is composed by ionizing particles such as protons and ions, which can be harmful to electronics.
Lie, Sonny (author)
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Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime. [PDF]
Micromachines (Basel)Wang J, Fan Y, Du Y, Huang S, Wan Y.
europepmc +1 more source
Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells
, 2011 The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations.
Ji-Ting Liang +8 more
core
True Random Number Generation Using Commercial 232-Layer 3D NAND Flash Memory
We propose a True Random Number Generator (TRNG) using commercial off-the-shelf (COTS) 3D NAND Flash memory. 3D NAND flash memory is widely used in consumer and enterprise applications, including solid-state drives (SSDs), mobile devices, and memory ...
Garofolo, Dominic
core