Results 61 to 70 of about 5,102 (147)

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Advanced Intelligent Systems, EarlyView.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo, Kyoung Min Choi, Geun Tae Park, Jin Ho Chang, Woo Young Choi   +4 more
wiley   +1 more source

Investigating 3D NAND Flash Read Disturb Reliability With Extreme Value Analysis

IEEE Transactions on Device and Materials Reliability, 2021
The storage systems relying on the 3D NAND Flash technology require an extensive modeling of their reliability in different working corners. This enables the deployment of system-level management routines that do not compromise the overall performance and reliability of the system itself.
Zambelli C., Crippa L., Micheloni R., Olivo P.   +3 more
openaire   +1 more source

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

IEEE Access, 2023
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj   +1 more source

NAND Flash Memory Characterization [PDF]

, 2019
The NAND technology has become a popular research area and implementation choice due to its non-volatile flash memory characteristics. There are many engineering challenges when it comes to NAND technology.
Heer, Tanvir Singh
core  

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

A Fully Integrated Analog Processing‐in‐Memory System Based on Charge‐Trap Flash Synapse Arrays and Successive Integration‐and‐Rescaling Neurons

Advanced Intelligent Systems, EarlyView.
A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim, Yeonwoo Kim, Woo Young Choi, Minsuk Koo, Yoon Kim   +4 more
wiley   +1 more source

Duality between erasures and defects

, 2016
We investigate the duality of the binary erasure channel (BEC) and the binary defect channel (BDC). This duality holds for channel capacities, capacity achieving schemes, minimum distances, and upper bounds on the probability of failure to retrieve the ...
Kim, Yongjune, Kumar, B. V. K. Vijaya
core   +1 more source

Keggin‐Type Aluminum Polyoxometalate‐Mediated Oxidation of Amorphous Carbon for Engineered Electrochemical Interfaces

Carbon Energy, EarlyView.
Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee, Dongmin Kang, Sumin Hong, Hongjun Park, Myungju Woo, Woojin Jeong, Giha Lee, Junsang Lee, Sangkyun Kim, Jea‐Gun Park, Takamasa Mori, Yehwan Kim, Taeseup Song, Ungyu Paik   +13 more
wiley   +1 more source

Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing

Advanced Materials, Volume 38, Issue 8, 6 February 2026.
This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son, Jea Min Cho, Dong Hoon Shin, Yeong Rok Kim, Néstor Ghenzi, Sunwoo Cheong, Byeong Su Kim, Jung Kyu Lee, Sungho Kim, Wonho Choi, Soo Hyung Lee, Janguk Han, Cheol Seong Hwang   +12 more
wiley   +1 more source