Results 71 to 80 of about 5,102 (147)

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Chen, Dakai, Kim, Hak, Label, Kenneth, Ladbury, Raymond, Phan, Anthony, Seidleck, Christina, Wilcox, Edward   +6 more
core   +1 more source

Ferroelectric Properties of Polyvinylidene Fluoride (PVDF): Advances and Prospects for Emerging Applications

Macromolecular Chemistry and Physics, Volume 227, Issue 2, 29 January 2026.
This review surveys how PVDF's ferroelectric behavior emerges from structure, processing, and phase engineering, and how it translates into memory, neuromorphic, and sensing technologies. Performance is benchmarked against leading inorganic ferroelectrics, while composites and hybrid systems are discussed as routes to improved endurance and ...
Achidi Frick, David Schreuder, Alejandra Castro‐Chong, Elizabeth von Hauff   +3 more
wiley   +1 more source

Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications

Advanced Materials, Volume 37, Issue 50, December 17, 2025.
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong   +9 more
wiley   +1 more source

Photodoping strategies in two‐dimensional semiconductors: Mechanisms, characterizations, and emerging applications

InfoMat, Volume 7, Issue 12, December 2025.
Photodoping has emerged as a promising alternative, offering non‐destructive, reversible, and highly tunable performance modulation of atomically thin two‐dimensional (2D) materials while overcoming the limitations of traditional silicon‐based doping methods.
Zhe Zhang, Qijia Tian, Shida Huo, Fanying Meng, Yuan Xie, Xiaodong Hu, Caofeng Pan, Enxiu Wu   +7 more
wiley   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND

IEEE Access, 2020
3D NAND is a great architectural innovation in the field of flash memory. The staircase for control gate is a unique and important process in the manufacturing of 3D NAND.
Peizhen Hong, Zhiguo Zhao, Jun Luo, Zhiliang Xia, Xiaojing Su, Libin Zhang, Chunlong Li, Zongliang Huo   +7 more
doaj   +1 more source

Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement

Small Science, Volume 5, Issue 12, December 2025.
The Pt/Ta2O5/Nb2O5−x/Au nanoparticles/Al2O3−y/Ti charge trap memristor (CTM) demonstrates faster and energy‐efficient operation compared to its counterpart without Au nanoparticles. This improvement is attributed to the synergistic effects of localized electric field enhancement and optimized electron trapping via band engineering. The findings present
Geunyoung Kim, Jiyul Park, Woojoon Park, Myeongchan Ko, Min Gu Lee, Hangyu Cho, Kyung Min Kim   +6 more
wiley   +1 more source