Results 131 to 140 of about 261,592 (260)

1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor

, 2006
Jian Hui Zhang, Jian Wu, P. Alexandrov, Terry Burke, Kuang Sheng, Jian Hui Zhao   +5 more
openalex   +1 more source

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC [PDF]

, 2014
Marko J. Tadjer, Travis J. Anderson, R.L. Myers-Ward, Virginia D. Wheeler, Luke O. Nyakiti, Zachary R. Robinson, C. Roland Eddy, D. Kurt Gaskill, Andrew D. Koehler, Karl D. Hobart, Francis J. Kub   +10 more
openalex   +1 more source

Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning

, 2022
Matthias Köcher, Schlichting, Holger, Kallinger, Birgit, Rommel, Mathias, Bauer, Anton J., Erlbacher, Tobias   +5 more
openalex   +1 more source

Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing. [PDF]

Sci Rep
Zanelli G, Fontan I, Andrini G, Corte E, Nieto Hernández E, Varzi V, Amine NH, Sturari S, Redolfi E, Rigato V, Campostrini M, Traina P, Picollo F, Genovese M, Ditalia Tchernij S, Forneris J.   +15 more
europepmc   +1 more source

Atomic-Scale Revelation of Voltage-Modulated Electrochemical Corrosion Mechanism in 4H-SiC Substrate. [PDF]

Micromachines (Basel)
Luo Q, Lin D, Lu J, Ke C, Tian Z, Jiang F, Zhu J, Huang H.   +7 more
europepmc   +1 more source

Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiC^TM Engineered Substrates for High Volume Manufacturing [PDF]

Enrica Cela, W. Schwarzenbach, Ramesh Shrestha, Gerhard Bast, Sam Shahidi, Gavin Simpson   +5 more
openalex   +1 more source

Polarity Effect on the Heteroepitaxial Growth of B_xC on 4H-SiC by CVD [PDF]

François Cauwet, Yamina Benamra, Laurent Auvray, J. Andrieux, Gabriel Ferro   +4 more
openalex   +1 more source

The Gate Oxide Breakdown Failures of 4H-SiC MOS Devices

, 2023
Cai Ping Wan, Kai Yu Wang, Tianchun Ye, Heng Xu   +3 more
openalex   +1 more source

Laser-Induced Liquid-Phase Boron Doping of 4H-SiC. [PDF]

Materials (Basel)
Kulkarni G, Bougdid Y, Sugrim CJ, Kumar R, Kar A.   +4 more
europepmc   +1 more source

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers. [PDF]

Sci Rep, 2023
Hochreiter A, Groß F, Möller MN, Krieger M, Weber HB.   +4 more
europepmc   +1 more source