Results 131 to 140 of about 19,738 (219)

Investigating Surface Morphology and Subsurface Damage Evolution in Nanoscratching of Single-Crystal 4H-SiC. [PDF]

Micromachines (Basel)
Xi J, Ban X, Hui Z, Ba W, Deng L, Qiu H.
europepmc   +1 more source

A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure. [PDF]

Micromachines (Basel)
Zhou Y, Du F, Song Q, Tang X, Yuan H, Han C, Zhang C, Zhang Y.   +7 more
europepmc   +1 more source

A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics. [PDF]

Micromachines (Basel)
Liu Y, Bai F, Fang J.
europepmc   +1 more source

Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]

Micromachines (Basel)
Dhyani M, Singh S, Tzhayek N, Bernstein JB.   +3 more
europepmc   +1 more source

Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC. [PDF]

Materials (Basel)
Vivona M, Bellocchi G, Puglisi V, Bongiorno C, Adamo S, Giannazzo F, Rascunà S, Roccaforte F.   +7 more
europepmc   +1 more source

Dislocations in 4H-SiC Epilayers

Journal of the Vacuum Society of Japan, 2017
openaire   +2 more sources

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]

Nanomaterials (Basel)
Yu M, Shen Y, Ma H, Zhang Q.
europepmc   +1 more source

Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges. [PDF]

Discov Nano
Li H, Wang H, Li Y, Lu X, Li L, Yan Y, Guo W.   +6 more
europepmc   +1 more source

Tunable Doping and Optoelectronic Modulation in Graphene-Covered 4H-SiC Surfaces. [PDF]

J Phys Chem C Nanomater Interfaces
Mansouri M, Martín F, Díaz C.
europepmc   +1 more source