Results 151 to 160 of about 261,592 (260)
Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC. [PDF]
Vivona M +7 more
europepmc +1 more source
Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation [PDF]
Infiter Tathfif, Sam Carter
openalex +1 more source
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Yu M, Shen Y, Ma H, Zhang Q.
europepmc +1 more source
Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate [PDF]
Haidong Yuan +8 more
openalex +1 more source
COMPARATIVE CHARACTERISTICS OF 6H– AND 4H–SiC SURFACES IN DIFFUSION WELDING [PDF]
Oleg Korolkov, Toomas Rang
openalex +1 more source
Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges. [PDF]
Li H +6 more
europepmc +1 more source
Tunable Doping and Optoelectronic Modulation in Graphene-Covered 4H-SiC Surfaces. [PDF]
Mansouri M, Martín F, Díaz C.
europepmc +1 more source
Microwave Annealing of Ion Implanted 4H-SiC [PDF]
Mulpuri V. Rao +8 more
openalex +1 more source

