Results 151 to 160 of about 19,738 (219)

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source

Robust single modified divacancy color centers in 4H-SiC under resonant excitation. [PDF]

Nat Commun
He ZX, Zhou JY, Li Q, Lin WX, Liang RJ, Wang JF, Wen XL, Hao ZH, Liu W, Ren S, Li H, You LX, Zhang RJ, Zhang F, Tang JS, Xu JS, Li CF, Guo GC.   +17 more
europepmc   +1 more source

Surface Modification and Crystal Quality Improvement of 4H-SiC Film via Laser Treatment: Comparison of Continuous Wave and Femtosecond Pulse Laser. [PDF]

Materials (Basel)
Han X, Zhou J, Li R, Wang S, Dong F, Sun C, Liu S.   +6 more
europepmc   +1 more source

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q_gd and R_on. [PDF]

Micromachines (Basel)
Cui W, Guo J, Xu H, Zhang DW.
europepmc   +1 more source

Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna. [PDF]

Nano Lett
Körber J, Heiler J, Fuchs P, Flad P, Hesselmeier E, Kuna P, Ul-Hassan J, Knolle W, Becher C, Kaiser F, Wrachtrup J.   +10 more
europepmc   +1 more source

A Novel Approach for Analysis of Rocking Curve X-Ray Diffraction Imaging Data (RC-XRDI) on 4H-SiC Using Cumulative Integrated Intensity (CII) Method. [PDF]

J Electron Mater
Estiri A, Bytheway R, Lafford TA, Fox OJL, Graham A, Hurley C, Shah VA.   +6 more
europepmc   +1 more source

Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors. [PDF]

Materials (Basel)
Jang T, Byeon M, Kang M, Lee SG, Lee JH, Lee SG, Min WJ, Hong TE.   +7 more
europepmc   +1 more source

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth. [PDF]

Materials (Basel)
Yang S, Guo N, Zhao S, Li Y, Wei M, Zhang Y, Liu X.   +6 more
europepmc   +1 more source

Study of ZrO₂ Gate Dielectric with Thin SiO₂ Interfacial Layer in 4H-SiC Trench MOS Capacitors. [PDF]

Materials (Basel)
Huang Q, Guo Y, Wang A, Bai Z, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q.   +9 more
europepmc   +1 more source

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC. [PDF]

RSC Adv
Guo N, Pei Y, Yuan W, Li Y, Zhao S, Yang S, Zhang Y, Liu X.   +7 more
europepmc   +1 more source