Results 161 to 170 of about 19,738 (219)

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC. [PDF]

RSC Adv
Jiang S, Li Y, Zhang Y, Chen C, Chen Z, Zhu W, He H, Wang X.   +7 more
europepmc   +1 more source

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC. [PDF]

Micromachines (Basel)
Yuan W, Pei Y, Li Y, Guo N, Zhang X, Liu X.   +5 more
europepmc   +1 more source

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures. [PDF]

Nanomaterials (Basel)
Huang Q, Guo Y, Wang A, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q.   +8 more
europepmc   +1 more source

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]

Micromachines (Basel)
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc   +1 more source

Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask

Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask
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Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Superlattices and Microstructures, 2021
Abstract In this work, CuAlO2 films were prepared on 4H–SiC (0001) using the sol-gel method. The surface morphology, structure and optical characteristics of the prepared films were studied. A homogeneous distribution of fine rhombohedral crystal structural grains is observed on the 4H–SiC substrate using scanning electron microscope (SEM).
Jichao Hu, Dan Li, Xiaomin He, Xi Wang, Bei Xu, Yuan Zang, Lianbi Li   +6 more
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Divacancy in 4H-SiC

Physical Review Letters, 2006
Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly
N T, Son, P, Carlsson, J, ul Hassan, E, Janzén, T, Umeda, J, Isoya, A, Gali, M, Bockstedte, N, Morishita, T, Ohshima, H, Itoh   +10 more
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Helium implantation into 4H‐SiC

physica status solidi (a), 2009
AbstractThe paper provides the properties of single crystalline 4H‐SiC under helium implantation at temperatures of implantation up to 750 °C and fluences in the range 5 × 1015–1 × 1017 cm−2. The microstructure evolution was studied by transmission electron microscopy cross‐section and X‐ray diffraction experiments. The mechanical property changes were
Barbot, J-F., Leclerc, S., David, M.-L., Oliviero, E., Montsouka, R., Pailloux, F., Eyidi, D., F. Denanot, M., Beaufort, M.F., Declémy, A., Audurier, V., Tromas, C.   +11 more
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