Results 161 to 170 of about 261,592 (260)

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector. [PDF]

Materials (Basel)
Mancuso AS, Sangregorio E, Muoio A, De Luca S, Kushoro MH, Gallo E, Vanellone S, Quadrivi E, Trotta A, Calcagno L, Via F.   +10 more
europepmc   +1 more source

Dislocations in 4H-SiC Epilayers

Journal of the Vacuum Society of Japan, 2017
openaire   +2 more sources

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors. [PDF]

Nanomaterials (Basel)
Zeng YX, Huang W, Ma HP, Zhang QC.
europepmc   +1 more source

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces

, 2006
Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, Hiroshi Nohira, T. Hattori   +6 more
openalex   +1 more source

Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel)
Bai Z, Ding C, Guo Y, Luo M, Zhou Z, Gu L, Zhang Q, Ma H.   +7 more
europepmc   +1 more source

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

, 2005
Caroline Blanc, Marcin Zieliński, Véronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Y. Monteil   +7 more
openalex   +1 more source

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers. [PDF]

Nanomaterials (Basel)
Wang Z, Bai Z, Guo Y, Ding C, Huang Q, Gu L, Shen Y, Zhang Q, Ma H.   +8 more
europepmc   +1 more source

Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Magdalena Weger, J. Kuegler, Michael Nelhiebel, M. Moser, Michel Bockstedte, Gregor Pobegen   +5 more
openalex   +1 more source

Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments. [PDF]

Microsyst Nanoeng
Wang L, Wan N, Yang Y, Wang Y, Zhao Y, Zhu J, Yang M, Lyu Y, Liu M, Zhao Y.   +9 more
europepmc   +1 more source

Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation. [PDF]

Micromachines (Basel)
Yan D, Huang H, Xue M, Duan N.
europepmc   +1 more source