Results 191 to 200 of about 261,592 (260)

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures. [PDF]

Nanomaterials (Basel)
Huang Q, Guo Y, Wang A, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q.   +8 more
europepmc   +1 more source

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]

Micromachines (Basel)
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc   +1 more source

Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric

Jiafei Yao, Zhengfei Yang, Yeqin Zhu, Qing Yao, Jing Chen, Kemeng Yang, Man Li, Maolin Zhang, Jun Zhang, Yufeng Guo   +9 more
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On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band. [PDF]

Sensors (Basel)
Asfour R, Khamas SK, Ball EA, Ng JS, Huang G, Allanic R, Le Berre D, Quendo C, Leuliet A, Merlet T.   +9 more
europepmc   +1 more source

Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask

Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask
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Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Semiconductor Science and Technology, 2023
Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC is
Weiwei Mao, C. Cui, Huifan Xiong, Naifu Zhang, Shuai Liu, Maofeng Dou, Lihui Song, Deren Yang, X. Pi   +8 more
semanticscholar   +1 more source

Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro‐Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H‐SiC

Advances in Materials, 2022
Silicon carbide (SiC), one of the third‐generation semiconductor materials with excellent electrical and optoelectronic properties, is ideal for high light‐sensing performance.
Yue Zhang, Yi-Chi Wang, Longfei Wang, Laipan Zhu, Z. Wang   +4 more
semanticscholar   +1 more source

MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor

IEEE Transactions on Electron Devices, 2022
In this article, an ultrahigh repetition frequency sub-nanosecond pulse generator based on vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) under high bias electric field is presented.
Xu Chu, Jinliang Liu, T. Xun, Langning Wang, Hanwu Yang, Juntao He, Jun Zhang   +6 more
semanticscholar   +1 more source