Results 191 to 200 of about 19,738 (219)
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High-power-density 4H-SiC RF MOSFETs
IEEE Electron Device Letters, 2006We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm ...
G. Gudjónsson +9 more
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Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes
SPIE Proceedings, 2008This paper describes the properties of the homoepitaxial 4H-SiC layer, the fabrication and electrical parameters of Ti/4H-SiC Schottky barrier diode (SBD). The 4H-SiC epitaxial layers, grown on the commercially available 8°off-oriented Si-face(0001) single-crystal 4H-SiC wafers, have been performed at 1550~1600°C by using the step controlled epitaxy
G. Chen, Z. Y. Li, S. Bai, P. Han
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Positron Mobility in Semi-Insulating 4H-SiC
Materials Science Forum, 1997Recently, as a result of the observation of positron re-emission from crystalline 6H-SiC, it has been suggested that SiC may be a promising material for a field assisted positron moderator [1]. In this paper an attempt is made to more deeply analyze this potential application of SiC, by presenting data on the low field positron electric field drift in ...
Hu, YF +6 more
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Low frequency noise in 4H-SiC BJTs
Semiconductor Science and Technology, 2004Low frequency noise has been investigated in 4H-SiC BJTs for the first time. In BJTs with the current gain ? ? 10?15 and unity current gain frequency fT of about 1.5 GHz, the corner frequency fc was found to be fc = 2 ? 104 Hz. The value of the coefficient KB, which is the figure of merit for the noise in the region of noise proportional to squared ...
Sergey L. Rumyantsev +3 more
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Monolayer growth modes of Re and Nb on 4H–SiC(0001) and 4H–SiC(0001¯)
Journal of Applied Physics, 2004Auger electron spectroscopy (AES) and secondary electron emission have been used to specify the room temperature monolayer adsorption characteristics of Re and Nb on the basal, polar surfaces of 4H–SiC. Measurement of the secondary electron emission current relates the absorbed crystal current to the change in AES peak-to-peak signal intensities for ...
K. W. Bryant, M. J. Bozack
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Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
Journal of Electronic Materials, 1997Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 100) and (1120) oriented substrates were used.
Weimin Si +4 more
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Journal of The Electrochemical Society, 2003
4H-SiC homoepitaxial films were grown on 8° off-axis porous 4H-SiC (0001) faces in the temperature range of 1280-1510°C by chemical vapor deposition from bis(trimethylsilyl)methane (BTMSM) precursor. The activation energy for growth was 5.6 kcal/ mol, indicating that the film growth is dominated by the diffusion-limited mechanism.
Jae Kyeong Jeong, Hyeong Joon Kim
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4H-SiC homoepitaxial films were grown on 8° off-axis porous 4H-SiC (0001) faces in the temperature range of 1280-1510°C by chemical vapor deposition from bis(trimethylsilyl)methane (BTMSM) precursor. The activation energy for growth was 5.6 kcal/ mol, indicating that the film growth is dominated by the diffusion-limited mechanism.
Jae Kyeong Jeong, Hyeong Joon Kim
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Progress and challenges towards additive manufacturing of SiC ceramic
Journal of Advanced Ceramics, 2021Rujie He, Keqiang Zhang, Daining Fang
exaly