Results 201 to 210 of about 9,695,497 (239)

Corrosion behavior of steel fiber reinforced concrete under ambipolar stray current interference

Construction and Building Materials
Hu Liu, Kaibin Li, Yongqiang Li, Suyun Liu, Zhijun Dong, Hongzhi Cui, Wei Liu   +6 more
openaire   +2 more sources

Device-design optimization of ferroelectric-gated vertical tunnel field-effect transistor to suppress ambipolar current

Semiconductor Science and Technology, 2020
Device-design optimization of a ferroelectric-gated vertical tunnel field-effect transistor (TFET) with a germanium source is performed using a technology computer-aided design simulation tool.
T. Jung, C. Shin
semanticscholar   +1 more source

Exciplex current mechanism for ambipolar bilayer organic light emitting diodes

Applied Physics Letters, 2011
The effect of exciplex dynamics on the current in a bilayer organic light emitting diode with ambipolar injection is explored. Exciplex formation facilitates intermolecular electron-hole recombination across the interface. We discuss the characteristics of the exciplex recombination current with respect to different energy level alignments, interface ...
Feilong Liu, P. Paul Ruden, Ian H. Campbell, Darryl L. Smith   +3 more
openaire   +1 more source

Hetero-gate Dielectric with Hetero Dielectric BOX for Suppressing Ambipolar Current in Tunnel FETs

2020 International Conference on Intelligent Engineering and Management (ICIEM), 2020
Scaling of transistors has been a challenging task among researchers. The conventional TFETs do offer a solution to this problem. However, TFETs based on simple silicon material fail to obtain high ON current and suffer from an ambipolar conduction ...
I. A. Pindoo, S. K. Sinha
semanticscholar   +1 more source

Direct current-self-sustained non-ambipolar plasma at low pressure

Applied Physics Letters, 2013
For decades, non-ambipolar diffusion has been observed and studied in laboratory plasmas that contain a double layer. However, self-sustained non-ambipolar plasma has yet to be demonstrated. This article reports the method and results for achieving such a condition at low pressure, with a wide power range (as low as 6 W).
Zhiying Chen, Lee Chen, Merritt Funk
openaire   +1 more source

GAA CNT TFETs Structural Engineering: A Higher ON Current, Lower Ambipolarity

IEEE Transactions on Electron Devices, 2019
Based on the nonequilibrium Green’s function (NEGF) ballistic transport simulation, an optimized homojunction carbon nanotube (CNT) gate-all-around tunnel field effect transistor (GAA TFET) is proposed in this study. This TFET enhances the ON-state current and suppresses the ambipolarity extensively.
S. G. Shirazi, G. R. Karimi, S. Mirzakuchaki   +2 more
openaire   +1 more source

A junctionless inverted-TFET with increased ON-current and reduced ambipolarity

2017 8th IEEE Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON), 2017
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET).
M. Ehteshamuddin, Sajad A. Loan, M. Rafat, Abdullah G. Alharbi   +3 more
openaire   +1 more source

Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET

Micro & Nano Letters, 2019
In this work, a distinctive approach for the suppression of ambipolar behaviour of novel polarity control electrically doped hetero tunnel field effect transistor (TFET) has been reported.
Bandi Venkata Chandan, K. Nigam, P. Kondekar, D. Sharma   +3 more
semanticscholar   +1 more source

Ambipolar mobility and injection currents in semiconductors with deep traps

Physica Status Solidi (a), 1973
The ambipolar mobility of charge carriers is discussed for compensated semiconductors with deep single-level traps; its influence on the double injection current is theoretically investigated. The I–U curve of a long sample is considered under the simultaneous variation of the ambipolar mobility and of the lifetime.
openaire   +1 more source

Enhanced on-state current and suppressed ambipolarity in germanium-source dual vertical-channel TFET

Semiconductor Science and Technology, 2021
Abstract In this paper, we provide a solution for the main disadvantages of tunnel field effect transistors (TFETs) by presenting a germanium-source dual vertical-channel TFET. Our device is composed of two Ge/Si tunneling junctions in which charge carriers tunnel perpendicular to the gate, and two n
Iman Chahardah Cherik, Saeed Mohammadi
openaire   +1 more source