Results 71 to 80 of about 9,695,497 (239)

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Advanced Materials, EarlyView.
This article explores charge transport in mixed ionic‐electronic conductors (MIECs) through electrochemical impedance spectroscopy and transient current analysis. Focusing on PEDOT:PSS, WO3, and n‐doped PBDF, it uncovers the impact of anomalous diffusion via fractional modeling. The study reveals key correlations that deepen understanding and guide the
Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert   +9 more
wiley   +1 more source

Ionization by bulk heating of electrons in capacitive radio frequency atmospheric pressure microplasmas

, 2013
Electron heating and ionization dynamics in capacitively coupled radio frequency (RF) atmospheric pressure microplasmas operated in helium are investigated by Particle in Cell simulations and semi-analytical modeling.
, A Derzsi, Babayan S E, Becker K H, D Eremin, Hemke T, J Meichsner, J Schulze, K Dittmann, Knake N, Kong M G, Kurihara M, Niemi K, Niermann B, Phelps A V, Pipa A V, Proshina O V, Reuter S, Reuter S, Schaper L, Schulze J, Schulze J, Schulze J, Schulze J, Schulze J, T Hemke, T Mussenbrock, Turner M M, Waskoenig J, Weltmann K D, Z Donkó   +30 more
core   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap [PDF]

مجله مدل سازی در مهندسی, 2019
Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for ...
Ali Naderi, Maryam Ghodrati
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Bandgap modulated phosphorene based gate drain underlap double-gate TFET

AIP Advances, 2018
In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Md. Abdullah-Al-Kaiser, Dip Joti Paul, Quazi D. M. Khosru   +2 more
doaj   +1 more source

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

, 2015
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on ...
Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F., Ponomarev, Evgeniy, Ubrig, Nicolas   +3 more
core   +2 more sources

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

A Simflowny-based high-performance 3D code for the generalized induction equation [PDF]

, 2018
In the interior of neutron stars, the induction equation regulates the long-term evolution of the magnetic fields by means of resistivity, Hall dynamics and ambipolar diffusion.
Arbona, Antoni, Bona, Carles, Carrasco, Federico, Martínez-Gómez, David, Massó, Joan, Miñano, Borja, Palenzuela, Carlos, Pons, José A., Viganò, Daniele   +8 more
core   +3 more sources

Stable P‐Type PbS Quantum Dot Ink for all‐Blade‐Coated Short‐Wavelength Infrared Photodiodes

Advanced Materials, EarlyView.
Stabilization of p‐type PbS quantum dot ink is achieved through hydrogen bonding between fluorinated alcohols solvent and the MP ligand, allowing a six‐day shelf‐life. The solvent does not compromise pre‐deposited layers, enabling fully blade‐coated photodiodes in both n–p and p–n architectures, with enhanced detectivity and bandwidth compared to layer‐
Han Wang, Jiaxiong Li, Jacopo Pinna, Mordechai Kot, Noah Y. N. van der Ploeg, Maria A. Loi   +5 more
wiley   +1 more source