A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]
Scientific ReportsThe potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous +2 more
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New tunneling source follower with low 1/f noise and high voltage gain [PDF]
Scientific ReportsWe have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (A v ) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient ...
Ki Yeong Kim +9 more
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A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement [PDF]
Discover Nano, 2023 This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given
Jyi-Tsong Lin, Shao-Cheng Weng
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Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance [PDF]
Micromachines, 2023 A new structure for PNPN tunnel field-effect transistors (TFETs) has been designed and simulated in this work. The proposed structure incorporates the polarity bias concept and the gate work function engineering to improve the DC and analog/RF figures of
Chan Shan +4 more
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Harnessing chaotic bifurcation in positive feedback transistors for secure and scalable random key generation [PDF]
Nature CommunicationsIn the era of big data, robust data security is more critical than ever. One promising way to create unpredictable random keys is to use the intrinsic physical randomness of electronic devices. However, controlling and reproducing this randomness remains
Jiseong Im +9 more
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Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
Micromachines, 2022 In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
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IOP Conference Series: Materials Science and Engineering, 2021 Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
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A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
IEEE Journal of the Electron Devices Society, 2022 The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin +7 more
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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications
Advanced Electronic Materials, 2023 Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
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Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
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