Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors
Advanced Electronic MaterialsDoping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT ...
Chen‐Han Chou +7 more
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Tunneling-Controlled Fusion of Short- and Long-Term Memory in SiO<sub>2</sub>/HfO<sub>2</sub>-Based Neuromorphic Device for Time-Series Prediction. [PDF]
Adv Sci (Weinh)Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Yang C, Xu L, Su L, Wu Y.
europepmc +2 more sources
Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor
IEEE Open Journal of Nanotechnology, 2020 In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
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Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling [PDF]
, 2013 We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure.
D'Amico, Pino +3 more
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Micromachines, 2020 In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation.
Jang Hyun Kim +4 more
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Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region
Applied Sciences, 2019 The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
doaj +1 more source
Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors
Micromachines, 2021 Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong +4 more
doaj +1 more source
An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]
, 2018 Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo +3 more
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Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study [PDF]
, 2018 In this letter, we report a quantum transport simu- lation study of the impact of Random Discrete Dopants (RDD)s on Si-InAs nanowire p-type Tunnel FETs.
Adamu-Lema, Fikru +7 more
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A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications [PDF]
, 2016 This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better behavior in the process of ...
Moll Echeto, Francisco de Borja +2 more
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