Results 31 to 40 of about 1,100 (152)

Device performance simulations of multilayer black phosphorus tunneling transistors [PDF]

, 2015
© 2015 AIP Publishing LLC.We report a theoretical investigation of ballistic transport in multilayer black phosphorus (BP) tunneling transistors (TFETs) with HfO2 as the gate oxide.
Guo, H, Liu, F, Shi, Q, Wang, J
core   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

Comment On >Assessment Of Field-Induced Quantum Confinement In Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor> Appl. Phys. Lett. 105, 082108 (2014) [PDF]

, 2015
Not AvailableNRI SWAN programNSF NASCENT ERCMicroelectronics Research CenterElectrical and Computer ...
Banerjee, Sanjay K., Hsu, William, Mantey, Jason, Register, Leonard F.   +3 more
core   +1 more source

Single-Charge Tunneling in Codoped Silicon Nanodevices

Nanomaterials, 2023
Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors.
Daniel Moraru, Tsutomu Kaneko, Yuta Tamura, Taruna Teja Jupalli, Rohitkumar Shailendra Singh, Chitra Pandy, Luminita Popa, Felicia Iacomi   +7 more
doaj   +1 more source

Core-Shell homojunction silicon vertical nanowire tunneling field-effect transistors [PDF]

, 2017
We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology.
Baek, C.-K., Kim, K, Yoon, J.-S
core   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

IEEE Journal of the Electron Devices Society, 2013
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET).
Ram Krishna Ghosh, Santanu Mahapatra
doaj   +1 more source

Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

, 2008
A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated.
Fang, Tian, Jena, Debdeep, Xing, Huili, Zhang, Qin   +3 more
core   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Electronic Transport and Thermopower in 2D and 3D Heterostructures--A Theory Perspective

, 2019
In this review, we discuss the impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials. We review recent progress in understanding electronic transport in two-dimensional (2D) materials ranging from ...
Aksamija, Zlatan, Kommini, Adithya, Majee, Arnab K.   +2 more
core   +1 more source