Results 61 to 70 of about 1,100 (152)

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

, 2015
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current.
Huang, Jun Z., Klimeck, Gerhard, Long, Pengyu, Povolotskyi, Michael, Zhang, Lining   +4 more
core   +1 more source

Devices, Functions, and Applications of Artificial Neuromorphic Visual Systems

Advanced Science, Volume 12, Issue 46, December 11, 2025.
This review highlights recent advances in optoelectronic synapses for artificial neuromorphic vision, emphasizing their material systems, structural designs, and performance metrics. It further discusses visual neural networks enabled by these synapses, covering perception, memory, and recognition functionalities, and analyzes challenges in stability ...
Jiaxin Liu, Bo Li, Chi Liu, Dongming Sun, Huiming Cheng   +4 more
wiley   +1 more source

Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study

IEEE Access, 2020
The leakage mechanisms of inefficient volume depletion and lateral band to band tunneling (L-BTBT) restrict the scaling of SOI-junctionless (JL) FETs. Therefore, in this article, we investigate the scalability of the SOI-JLFETs by incorporating a ground ...
Aakash Kumar Jain, Mamidala Jagadesh Kumar   +1 more
doaj   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
wiley   +1 more source

Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

Micromachines, 2023
In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed.
Haiwu Xie, Hongxia Liu
doaj   +1 more source

Degradable organic neuromorphic transistors: Emerging progress in optoelectronically co‐reconfigurable devices for sustainable electronics

FlexMat, Volume 2, Issue 4, Page 510-532, December 2025.
Degradable organic neuromorphic transistors represent a sustainable electronics platform tailored for future AI demands. By combining computational efficiency with eco‐friendly traits, these devices enhance both performance and sustainability. This review highlights progress in electronically controlled and optoelectronically reconfigurable transistors
Mingyi Ding, Deyang Ji, Wenping Hu
wiley   +1 more source

Organic field‐effect transistors: Materials design, device physics, and contact engineering for high‐performance flexible electronics

Information &Functional Materials, Volume 2, Issue 4, Page 267-305, December 2025.
This review bridges molecular design with device engineering to address key challenges in organic transistors. By integrating materials chemistry with contact optimization, it provides pathways toward stable, high‐performance flexible electronics. Abstract Organic field‐effect transistors are widely recognized as key enabling components for low‐cost ...
Fenglan Kuang, Fei Wang, Dawei Duan, Yicong Ma, Xiaokang Sun, Soumitra Satapathi, Annie Ng, Haoran Lin, Zheng Li, Yufei Zhong, Hanlin Hu   +10 more
wiley   +1 more source

Interface Segmentation Approach (InSeAp) on TCAD for Statistical Analysis of Interface Trap Spatial Variations in TFETs

IEEE Access
This work proposes a methodology to conduct statistical analyses of variation in spatial location and concentration of gate oxide/ semiconductor interface traps taking the example of a p-i-n silicon-on-insulator (SOI) tunnelling field-effect transistor ...
Anirudh Koteshwar, Shanidul Hoque, Deepjyoti Deb, Rupam Goswami   +3 more
doaj   +1 more source

In-Built N⁺ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

Micromachines, 2020
In this paper, we present an in-built N+ pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate
Jun Li, Ying Liu, Su-fen Wei, Chan Shan
doaj   +1 more source

Exploring Double NDR Modulation and UV‐NIR Photodetection in MoS2/Sb2Se3 Heterostructures

Advanced Optical Materials, Volume 13, Issue 32, November 14, 2025.
In this study, a van der Waals Sb2Se3/MoS2 heterostructure exhibits dual negative differential resistance (NDR) peaks at room temperature. The first originates from band‐to‐band tunneling, while the second, triggered under laser illumination, is attributed to trap states and recombination dynamics.
Muhammad Suleman, Minwook Kim, Arslan Rehmat, Ehsan Elahi, Muhammad Asim, Muhammad Riaz, Sunil Kumar, Jongwan Jung, Yongho Seo   +8 more
wiley   +1 more source