Results 81 to 90 of about 1,100 (152)
Scientific Reports, 2017 Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale +10 more
doaj +1 more source
Tailored Growth of Transition Metal Dichalcogenides’ Monolayers by Chemical Vapor Deposition
Small, Volume 21, Issue 28, July 17, 2025.Here, results on the tailored growth of various 2D semiconductors’ monolayers of transition metal dichalcogenides are presented using chemical vapor deposition techniques. Basic electronic, photonic and optoelectronic properties of the grown quantum materials are studied by high‐resolution microscopy and spectroscopy techniques and are analyzed for ...
Andrey Turchanin, Antony George
wiley +1 more source
Dopingless 1T DRAM: Proposal, Design, and Analysis
IEEE Access, 2019 In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge plasma concept. The proposed device employs a misaligned double-gate architecture to store holes and differentiates between the two logic states.
Akhil James, Sneh Saurabh
doaj +1 more source
, 2023 Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area and energy ...
Deshpande, Veeresh +6 more
core
Small, Volume 21, Issue 30, July 29, 2025.This review categorizes ML‐TMDs into commensurate and incommensurate structures and examines their effects on electronic band structures, optical responses, ferroelectricity, and the anomalous Hall effect. It discusses synthetic methods, such as mechanical stacking, chemical vapor deposition (CVD), interfacial epitaxy, and hypotaxy, and introduces the ...
Hyun‐Geun Oh +7 more
wiley +1 more source
HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsField-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj +1 more source
Leakage Minimization Technique for Nanoscale CMOS VLSI [PDF]
, 2007 Because of the continued scaling of technology and supply-threshold voltage, leakage power has become more significant in power dissipation of nanoscale CMOS circuits.
Choi, Minsu +3 more
core +1 more source
Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application
IEEE AccessTunneling Field-Effect Transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFET) and could overcome the physical limit, which results in the ...
Chi-Cheng Tien, Yu-Hsien Lin
doaj +1 more source
Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials [PDF]
, 2013 In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off ...
Devi, Dass +2 more
core
Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
doaj +1 more source