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Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

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