Results 51 to 60 of about 14,686 (140)

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

IEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo   +7 more
doaj   +1 more source

Extremely wideband signal shaping using one- and two-dimensional nonuniform nonlinear transmission lines [PDF]

, 2006
We propose a class of electrical circuits for extremely wideband (EWB) signal shaping. A one-dimensional, nonlinear, nonuniform transmission line is proposed for narrow pulse generation.
Afshari, E., Bhat, H. S., Hajimiri, A., Marsden, J. E.   +3 more
core   +1 more source

Towards simultaneous electrical and optical investigation of BLMS using a novel microfluidic device [PDF]

, 2008
We firstly describe the influence of the phospholipid (PL) composition of bilayer lipid membrane on their electrical properties: (i) the more unsaturations in the tail, the earlier the BLM breakdown and (ii) the bulkier the head group, the less stable ...
Bennink, Martin, Berg, Albert van den, Boer, Hans de, Bomer, Johan, Cesa, Yanina, Le Gac, Séverine, Uitert, Iris van   +6 more
core   +1 more source

Spin-dependent transport in a Luttinger liquid

, 2000
We develop a detailed theory for spin transport in a one-dimensional quantum wire described by Luttinger liquid theory. A hydrodynamic description for the quantum wire is supplemented by boundary conditions taking into account the exchange coupling ...
A. Brataas, A. Brataas, A.F. Andreev, A.G. Aronov, A.O. Gogolin, C. Dekker, C. Dekker, C.H. Bennett, C.L. Kane, C.L. Kane, D. Huertas Hernando, D.D. Awschalom, G. Baskaran, G.A. Prinz, I. Affleck, I. Affleck, J. Cardy, J. Slonczewski, K. Tsukagoshi, K.-V. Pham, K.K. Likharev, L. Balents, L. Balents, L. Balents, L. Balents, L. Balents, L. Balents, L.D. Landau, M. Bockrath, M. Johnson, M. Johnson, M.A.M. Gijs, N. Nagaosa, P. Fazekas, Q. Si, Q. Si, R. Egger, R. Egger, R. Egger, S. Sachdev, T. Senthil, W.H. Press, Z. Yao, Z. Zou   +43 more
core   +1 more source

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Applied Physics Express
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown ...
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He, Houqiang Fu   +4 more
doaj   +1 more source

Electrical current distribution across a metal-insulator-metal structure during bistable switching

, 2001
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas
Baiatu T., C. Rossel, D. Brémaud, D. Widmer, G. I. Meijer, Kirk H. R., Kirk H. R., Lau W. S., Lin P. S. D., Lin P. S. D., Liu S. G., Tamatsuka M., Waser R., Waser R., Waser R.   +14 more
core   +1 more source

Adaptive us-mrac for disturbance cancellation [PDF]

, 1995
A variable structure, model reference adaptive control (VS-MRAC) devoted to cancel interferences without the requirement of an auxiliary input is proposed.
Bertran Albertí, Eduardo, Montoro López, Gabriel   +1 more
core   +2 more sources

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

Advances in Condensed Matter Physics, 2015
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
Chao Yang, Jiayun Xiong, Jie Wei, Junfeng Wu, Bo Zhang, Xiaorong Luo   +5 more
doaj   +1 more source

Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars

Results in Physics, 2020
To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo, Shengdong Hu, Jian'an Wang, Gang Guo, Chang Liu, Han Yang, Shenglong Ran   +6 more
doaj   +1 more source

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Micromachines, 2018
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other
Yifei Huang, Ying Wang, Xiaofei Kuang, Wenju Wang, Jianxiang Tang, Youlei Sun   +5 more
doaj   +1 more source