Results 11 to 20 of about 108 (78)
Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor
Applied Sciences, 2023 Recently, research on artificial neuron circuits imitating biological systems has been actively studied. The neuron circuit can implement an artificial neural network (ANN) capable of low-power parallel processing by configuring a biological neural ...
Junhyeong Lee, Misun Cha, Min-Woo Kwon
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Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact
IEEE Journal of the Electron Devices Society, 2019 In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes.
Jyi-Tsong Lin +5 more
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Fully bulk CMOS compatible Key Shape Floating Body Memory (KFBM)
Memories - Materials, Devices, Circuits and Systems, 2023 This paper presents a capacitorless memory cell with bulk CMOS compatibility, consisting of a MOSFET with a virtual floating body formed by the trench. The name Key shape Floating Body Memory (KFBM) is derived from the resemblance of the structure to the
Masakazu Kakumu +3 more
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A Review of Sharp-Switching Band-Modulation Devices
Micromachines, 2021 This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled ...
Sorin Cristoloveanu +8 more
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Micromachines, 2023 A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work.
Balamahesn Poongan +7 more
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InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
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Control and Design of a Boost-Based Electrolytic Capacitor-Less Single-Phase-Input Drive
Energies, 2022 Adjustable-speed drives with single-phase input require a power factor correction front-end, usually implemented by a boost converter, to reduce the current distortion from the uncontrolled rectifier; this stage is then followed by a three-phase inverter.
Alex Musetti +2 more
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IEEE Access, 2022 This paper presents the design of an output-capacitorless low-dropout voltage regulator (OCL-LDO) capable of driving a wide range of load capacitance and supplying a wide range of load current while maintaining excellent load and line regulations, thanks
Tanachai Limpisawas +1 more
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FinFETs: From Devices to Architectures
Advances in Electronics, Volume 2014, Issue 1, 2014., 2014 Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short‐channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology ...
Debajit Bhattacharya +2 more
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Comparative Study of Steep Switching Devices for 1T Dynamic Memory
Tecnología en MarchaThis work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha +3 more
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