Results 21 to 30 of about 108 (78)
Nanomaterials, 2022 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using ...
Hee Dae An +11 more
doaj +1 more source
Active and Passive Electronic Components, Volume 24, Issue 4, Page 233-241, 2001., 2001 A new active‐only sinusoidal oscillator is presented. The oscillator circuit uses two internally compensated operational amplifiers, two plus‐type second‐generation current conveyors and three operational transconductance amplifiers. The proposed circuit enjoys the attractive features of totally uncoupled frequency and condition of oscillation, low ...
Muhammad Taher Abuelmaatti
wiley +1 more source
Multi‐Function Active‐Only High‐Order Current‐Driven Filter
Active and Passive Electronic Components, Volume 23, Issue 3, Page 157-161, 2000., 2000 A new multi‐function high‐order current‐driven filter is proposed. The filter uses only operational amplifiers, and operational transconductance amplifiers (OTAs). Without using any external passive elements, a variety of high‐order input‐current/output‐current and/or input‐current/output‐voltage responses can be realised without changing the circuit ...
Muhammad Taher Abuelma′atti +1 more
wiley +1 more source
1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design
IEEE Journal of the Electron Devices Society, 2015 In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On ...
Arnab Biswas, Adrian M. Ionescu
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Nanomaterials, 2023 In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD ...
Jin Park +11 more
doaj +1 more source
A New Capacitor-Less Buck DC-DC Converter for LED Applications
Active and Passive Electronic Components, 2017 In this paper, a new capacitor-less DC-DC converter is proposed to be used as a light emitting diode (LED) driver. The design is based on the utilization of the internal capacitance of the LED to replace the smoothing capacitor.
Munir Al-Absi +2 more
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Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.A split‐gate amorphous oxide semiconductor (AOS) 2T0C DRAM effectively suppresses capacitive coupling and sneak‐path currents that occur in conventional 2T0C designs using a split‐gate read transistor. It shows a high on/off ratio, long retention time, and multiple conductance states.
Jeong‐Min Lee +3 more
wiley +1 more source
TechnologiesActive ripple suppression branches (ARSBs) are widely employed in switching power converters interfacing ripple-sensitive devices such as batteries, supercapacitors, hydrogen electrolyzers, fuel cells, and photovoltaic panels.
Vladimir Yuhimenko +5 more
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IEEE Journal of the Electron Devices SocietyCapacitorless DRAM architectures based on Back-End-of-Line (BEOL)-transistors are promising for long-retention, high-density and low-power 3D DRAM solutions due to its low leakage, operational flexibility, and monolithic integration capability. Different
Lihua Xu +5 more
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Scientific Reports, 2022 In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed ...
Sang Ho Lee +7 more
doaj +1 more source